Abstract
A comprehensive model is presented to study quantum well tapered lasers and quantum well stripe lasers with profiled reflectivity output facets and to obtain lateral stability in high power semiconductor laser. Simulation of semiconductor lasers is performed by numerically solving space-dependent coupled partial differential equations for the complex optical forward and backward waves, carrier density distribution and temperature distribution. The coupled equations are solved by finite difference beam propagation method. The effect of nonlinear parameters like Kerr and linewidth enhancement factors, and precise dependence of linewidth enhancement factor and gain factor on the carrier density and temperature are considered in this paper. We use modal reflector in stripe lasers to confine the lateral mode to the stripe centre and provide the stable operation. We also use unpumped window to reduce the facet temperature and improve the catastrophic optical mirror damage level of tapered lasers.
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Seyedfaraji, A., Ahmadi, V. & Noshiravani, M. Stable high optical power in quantum well lasers with profiled reflection and tapered structures. Opt Quant Electron 45, 401–410 (2013). https://doi.org/10.1007/s11082-012-9645-1
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DOI: https://doi.org/10.1007/s11082-012-9645-1