Abstract
Optical gain performance of InP based “W” structure with InGaAs(N)/GaAsSb type-II quantum wells are investigated theoretically. The band structure was calculated by using k.p model, taking into account the conduction band mixing with N resonant band, valence band mixing, as well as strain effect. Our studies show that these type-II quantum wells are suitable for mid-infrared (2–4 μm) operation at room temperature.
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Chen, B., Holmes, A.L. Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission. Opt Quant Electron 45, 127–134 (2013). https://doi.org/10.1007/s11082-012-9610-z
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DOI: https://doi.org/10.1007/s11082-012-9610-z