Journal of Nanoparticle Research

, 11:1947

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Authors

  • Zongyou Yin
    • Photonics Research Center, School of Electrical & Electronic EngineeringNanyang Technological University
    • Photonics Research Center, School of Electrical & Electronic EngineeringNanyang Technological University
  • Jixuan Zhang
    • Department of Materials Science & EngineeringNational University of Singapore
  • Jinghua Zhao
    • Photonics Research Center, School of Electrical & Electronic EngineeringNanyang Technological University
  • Sentosa Deny
    • Photonics Research Center, School of Electrical & Electronic EngineeringNanyang Technological University
  • Hao Gong
    • Department of Materials Science & EngineeringNational University of Singapore
Research Paper

DOI: 10.1007/s11051-008-9551-4

Cite this article as:
Yin, Z., Tang, X., Zhang, J. et al. J Nanopart Res (2009) 11: 1947. doi:10.1007/s11051-008-9551-4

Abstract

The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded InxGa1−xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded InxGa1−xAs top barrier layer of the structure. The QDs’ ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs’ PL emission is sensitive to the QD size.

Keywords

Photoluminescence Quantum dots Graded barrier Crystal quality State filling Nanocomposites

Copyright information

© Springer Science+Business Media B.V. 2008