Research Paper

Journal of Nanoparticle Research

, Volume 11, Issue 5, pp 1179-1183

Synthesis and morphology evolution of GaN/C nanocables

  • Xuefeng DuAffiliated withShanghai Institute of Ceramics, Chinese Academy of SciencesCollege of Material Science and Engineering, Shanghai University
  • , Yingchun ZhuAffiliated withShanghai Institute of Ceramics, Chinese Academy of Sciences Email author 
  • , Tao YangAffiliated withShanghai Institute of Ceramics, Chinese Academy of Sciences
  • , Yue ShenAffiliated withCollege of Material Science and Engineering, Shanghai University
  • , Yi ZengAffiliated withShanghai Institute of Ceramics, Chinese Academy of Sciences
  • , Fangfang XuAffiliated withShanghai Institute of Ceramics, Chinese Academy of Sciences

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Abstract

GaN/C nanocables were synthesized via a thermochemical process. The GaN/C nanocables were composed of single crystalline GaN nanowire cores with a mean diameter of 80 nm and parallel carbon sheathes with a thickness of several nanometers. We find that GaN nanocables were partially evolved into waved GaN nanowires and discontinuously ordered nanodots within the carbon sheaths due to the decomposition of GaN at high temperature regions. Both the carbon sheathes and GaN nanowire cores show a high degree of crystalline perfection. This method may be applied to coat a wide range of nanostructures with carbon sheathes and prepare various hetrostructures, which may serve as potential building blocks in nanodevices.

Keywords

GaN/C nanocables Chemical vapour deposition Coatings Decomposition Nanostructure