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Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer

  • Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications
  • Published:
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Abstract

A highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin film with an upper Bi4Ti3O12 (BTO) buffer layer was fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The effects of the added upper Bi4Ti3O12 (BTO) layer on the structural and electrical properties of BNTM were investigated. X-ray diffraction, SEM and AFM images indicated that BTO/BNTM thin films exhibited a significantly higher (117) orientation and larger grain growth compared with the BNTM thin films (without the upper BTO layer). It was found that the BTO/BNTM thin films further showed the relatively larger remanent polarization (2P r = 94.3 μC/cm2) and dielectric constant (ε r = 467.8). The enhancement of piezoelectric properties was also obtained in BTO/BNTM thin films. Moreover, the BTO/BNTM thin films displayed the better fatigue properties, degraded by only 7.4 % after 109 pulse cycles as compared to 30.2 % for BNTM thin films.

Graphical Abstract

A highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin film with an upper Bi4Ti3O12 (BTO) buffer layer was fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The effects of the added upper Bi4Ti3O12 (BTO) layer on the structural and electrical properties of BNTM were investigated. X-ray diffraction, SEM and AFM images indicated that BTO/BNTM thin films exhibited a significantly higher (117) orientation and larger grain growth compared with the BNTM thin films (without the upper BTO layer). It was found that BTO/BNTM thin films further showed the relatively larger remanent polarization (2P r = 94.3 μC/cm2) and dielectric constant (ε r = 467.8). The enhancement of piezoelectric properties was also obtained in BTO/BNTM thin films. Moreover, the BTO/BNTM thin films displayed the better fatigue properties, degraded by only 7.4 % after 109 pulse cycles as compared to 30.2 % for BNTM thin films.

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Acknowledgments

This work was financially supported by the Project of National Natural Science Foundation of China (NSFC) (Grant Nos. 61274107, 51472210 and 61404113), the Key Project of Hunan Provincial NSFC (Grant No. 13JJ2023) and Hunan Provincial Innovation Foundation for Postgraduate Grant No. CX2014B267.

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Authors and Affiliations

  1. Key Laboratory of Key Film Materials and Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University, Xiangtan, 411105, Hunan, China

    W. L. Zhang, M. H. Tang, Y. G. Xiao, S. A. Yan & Z. Li

  2. Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University, Xiangtan, 411105, Hunan, China

    W. L. Zhang, M. H. Tang, Y. G. Xiao, S. A. Yan & Z. Li

  3. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, 411105, Hunan, China

    Y. Xiong

  4. School of Automotive Engineering, Weifang University of Science and Technology, Weifang, 262700, Shandong, China

    Z. P. Wang

  5. Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, BC, V8L 4B2, Canada

    J. He

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  1. W. L. Zhang
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  2. M. H. Tang
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  5. Y. G. Xiao
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Correspondence to M. H. Tang or Z. Li.

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Zhang, W.L., Tang, M.H., Xiong, Y. et al. Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer. J Sol-Gel Sci Technol 80, 853–859 (2016). https://doi.org/10.1007/s10971-016-4175-0

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  • DOI: https://doi.org/10.1007/s10971-016-4175-0

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