Abstract
LaNiO3 (LNO) buffer layer was introduced into barium strontium titanate (BST) thin films deposited on stainless steel (SS) substrates by the sol–gel technique. Results show that the crystallization temperature of BST thin films is decreased from 750 to 720 °C by introducing LNO conducting oxide layer. Simultaneously, the suffered thermal stress for BST films is depressed as SS is a “compressive” substrate. Furthermore, the dielectric loss is notably decreased especially at 103–105 Hz, and the tunability is improved from 24.0 to 26.6 % under the field of 300 kV/cm, because the strain is reduced as characterized by the XRD and Raman spectra. The leakage current density of BST thin films is also significantly decreased by LNO layer, and its mechanism is analyzed. Such results imply that it is worthwhile to introduce LNO buffer layer for BST films on metal substrates to improve their dielectric properties by reducing the misfit strains, especially for “compressive” substrates.
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This work was supported by the National Natural Science Foundation of China (Grant No.51302163) and the Innovational Foundation of Shanghai University (Grant. No.K.10- 0110-13-009).
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Dong, H., Lu, G., Chen, D. et al. Effects of LaNiO3 buffer layer on improving the dielectric properties of barium strontium titanate thin films on stainless steel substrates. J Sol-Gel Sci Technol 80, 848–852 (2016). https://doi.org/10.1007/s10971-016-4169-y
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DOI: https://doi.org/10.1007/s10971-016-4169-y