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Effects of seed layer and crystallization process on crystal orientation and properties of NKBT thin films

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Abstract

Lead-free (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) piezoelectric thin films were fabricated via an aqueous sol–gel method on Pt(111)/Ti/SiO2/Si substrates. The thin films, with and without Pb0.8La0.1Ca0.1Ti0.975O3 seed layer, were obtained by single-crystallization and multiple-crystallization processes. The NKBT thin films derived by multiple-crystallization process exhibited better single perovskite structure, and the films with PLCT seed layers were well crystallized with high (100) orientation. The effects that seed layer and different crystallization processes have on crystal orientation and electrical properties can be attributed to extrinsic and intrinsic contributions, and their different mechanism and ranges of improvement in the dielectricity and piezoelectricity are observed and discussed. The NKBT thin films that prepared by multiple crystallization with PLCT seed layer had the best electric property with ε r of 598, tanδ of 0.08, and d 33 of 136 pm/V.

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Acknowledgements

The work was supported by Ministry of Sciences and Technology of China through National Basic Research Program of China (973 Program 2015CB654604), National Natural Science Foundation of China for Creative Research Groups (Grant No. 51221291), National Natural Science Foundation of China (Grant No. 51272123), and CBMI Construction Co., Ltd.

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  1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

    Wenhan Cui, Xiaohui Wang & Longtu Li

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  1. Wenhan Cui
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  2. Xiaohui Wang
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  3. Longtu Li
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Correspondence to Xiaohui Wang.

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Cui, W., Wang, X. & Li, L. Effects of seed layer and crystallization process on crystal orientation and properties of NKBT thin films. J Sol-Gel Sci Technol 75, 703–709 (2015). https://doi.org/10.1007/s10971-015-3742-0

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  • DOI: https://doi.org/10.1007/s10971-015-3742-0

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