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Enhanced dielectric properties of LSCO-buffered Ba(Sn0.05Ti0.95)O3 thin film prepared by sol–gel processing

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Abstract

Ferroelectric Ba(Sn0.05Ti0.95)O3 (BTS) thin films were deposited onto Pt/Ti/SiO2/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.

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Acknowledgments

This research was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613304, Shanghai Nano Fundamental Committee under Contract No. 05nm05028, and Program for New Century Excellent Talents in University (NCET), Specialized Research Fund for the Doctoral Program of Higher Education (SRFDP20060247003) and Shanghai Pujiang Program (05PJ14094).

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Authors and Affiliations

  1. Function Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai, 200092, China

    Sannian Song, Jiwei Zhai & Xi Yao

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  1. Sannian Song
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  2. Jiwei Zhai
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  3. Xi Yao
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Correspondence to Jiwei Zhai.

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Song, S., Zhai, J. & Yao, X. Enhanced dielectric properties of LSCO-buffered Ba(Sn0.05Ti0.95)O3 thin film prepared by sol–gel processing. J Sol-Gel Sci Technol 44, 75–79 (2007). https://doi.org/10.1007/s10971-007-1604-0

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  • DOI: https://doi.org/10.1007/s10971-007-1604-0

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