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First-Principles Study of Spin Transport in CrO2–Graphene–CrO2 Magnetic Tunnel Junction

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Abstract

We investigate the spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes. IV characteristics for both parallel and antiparallel magnetization states of the junction are calculated. A large value of tunnel magnetoresistance (TMR) and perfect spin filtration was obtained using HMF electrodes as compared to ferromagnetic electrodes reported in past, which suggest half-metallic ferromagnetic electrodes as a suitable candidate over ferromagnetic electrodes for implementing graphene sheet-based MTJs. A high value (∼89 %) of tunnel magnetoresistance is obtained at zero bias voltage, which reduces to ∼68 % at a bias voltage of 0.2 V and increases as the bias voltage is increased from 0.4 to 0.6 V. At higher bias voltages in the range of 0.8 to 1.2 V, the TMR does not change much and remains high at ∼88 %. The high value of TMR suggests its usefulness in spin valves and other spintronics-based applications. The spin-dependent non-equilibrium transport is also investigated by analyzing the bias-dependent transmission coefficients.

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References

  1. Wang, B., Zhu, Y., Ren, W., Wang, J., Guo, H.: Spin-dependent transport in Fe-doped carbon nanotubes. Phys. Rev. B 75, 235415 (2007)

    Article  ADS  Google Scholar 

  2. Yao, K.L., Min, Y., Liu, Z.L., Cheng, H.G., Zhu, S.C., Gao, G.Y.: First-principles study of transport of V doped boron nitride nanotube. Phys. Lett. A 372(34), 5609–5613 (2008)

    Article  ADS  MATH  Google Scholar 

  3. Nowak, J., Rauluszkiewicz, J.: Spin dependent electron tunneling between ferromagnetic films. J. Magn. Magn. Mater. 109(1), 79–90 (1992)

    Article  ADS  Google Scholar 

  4. Chakraverty, M., Kittur, H.M., Arun Kumar, P.: First principle simulations of various magnetic tunnel junctions for applications in magnetoresistive random access memories. IEEE Trans. Nanotechnol. 12(6) (2013)

  5. Cobas, E., Friedman, A.L., van’t Erve, O.M.J., Robinson, J.T., Jonker, B.T.: Graphene based magnetic tunnel junction. IEEE Trans. Magn. 49(7) (2013)

  6. Li, W., Xue, L., Abruna, H.D., Ralph, D.C.: Magnetic tunnel junctions with single-layer-graphene tunnel barriers. Phys. Rev. B 89(18), 184418 (2014)

    Article  ADS  Google Scholar 

  7. Semenov, Y.G., Kim, K.W., Zavada, J.M.: Spin field effect transistor with a graphene channel. Appl. Phys. Lett. 91(15), 153105 (2007)

    Article  ADS  Google Scholar 

  8. Kheirabadi, N., Shafiekhani, A., Fathipour, M.: Review on graphene spintronic, new land for discovery. Superlattice. Microst. 74, 123–145 (2014)

    Article  ADS  Google Scholar 

  9. Cobas, E., Friedman, A. L., van’t Erve, O. M. J., Robinson, J. T., Jonker, B. T.: Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions. Nano Lett. 12(6), 3000–3004 (2012)

    Article  Google Scholar 

  10. Karpan, V.M., Giovanetti, G., Khomyakov, P.A., Talanana, M., Starikov, A.A., Zwierzycki, M., van den Brink, J., Brocks, G., Kelly, P.J.: Graphite and graphene as perfect spin filters. Phys. Rev. Lett. 99, 176602 (2007)

    Article  ADS  Google Scholar 

  11. Yazyev, O. V., Pasquarello, A.: Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride. Phys. Rev. B 80, 035408 (2009)

    Article  ADS  Google Scholar 

  12. Bratkovsky, A.M.: Tunneling of electrons in conventional and half-metallic systems: towards very large magnetoresistance. Phys. Rev. B 56, 2344 (1997)

    Article  ADS  Google Scholar 

  13. Sughara, S., Tanaka, M.: A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84(13), 2307–2309 (2004)

    Article  ADS  Google Scholar 

  14. Surya, V. J., Iyakutti, K., Mizuseki, H., Kawazoe, Y.: Tuning electronic structure of graphene: a first-principles study. IEEE Trans. Nanotechnol. 11(3) (2012)

  15. Atomistix, QuantumWise A/S, http://www.quantumwise.com

  16. Choudhary, S., Qureshi, S.: Theoretical study on the effect of dopant positions and dopant density on transport properties of a BN co-doped SiC nanotube. Phys. Lett. A 377(5), 430–435 (2013)

    Article  ADS  Google Scholar 

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Correspondence to Sudhanshu Choudhary.

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Choudhary, S., Goyal, R. First-Principles Study of Spin Transport in CrO2–Graphene–CrO2 Magnetic Tunnel Junction. J Supercond Nov Magn 29, 139–143 (2016). https://doi.org/10.1007/s10948-015-3223-2

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  • DOI: https://doi.org/10.1007/s10948-015-3223-2

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