Abstract
An electron transport through the extremely small gaps (1–5 nm wide) formed in narrow and thin gold nanowires by the electromigration method is studied in this work at various temperatures. A careful investigation of the final stage of a gap formation has shown a quantum character of a nanowire conductivity on this stage. Analysis of the electron transport characteristics through the resulting gaps was carried out. It shows that regimes of both a direct tunneling between electrodes and a “cold” emission into a barrier region were realized. Significant reduction of electron work function for gold electrodes of prepared gaps is revealed.
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References
The International Technology Roadmap for Semiconductors. website: http://www.itrs.net/
Feynman, R.Y.: There is a plenty of room at the bottom. Eng. Sci. 23, 22–36 (1960)
Aviram, A., Ratner, M. A.: Molecular rectifiers. Chem. Phys. Lett. 29, 277 (1974)
Tsutsui, M., Taniguchi, M.: Single molecule electronics and devices. Sensors 12, 7259–7298 (2012)
Okabayashi, N., et al.: Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles. Appl. Phys. Lett. 100, 033101 (2012)
Gonzalez, G., et al.: Kondo effect in single-molecule magnet transistors. Phys. Rev. B 78, 054445 (2008)
Fock, J., et al.: Manipulation of organic polyradicals in a single-molecule transistor. Phys. Rev. B 86, 235403 (2012)
Paul Alivisatos, A., et al.: Fabrication of metallic electrodes with nanometer separation by electromigration. Appl. Phys. Lett. 75, 301 (1999)
Stepanov, A. S., et al.: Fabrication of integrated electrodes of molecular transistor by lithographic techniques and electromigration, proc. SPIE 8700, International Conference Microand Nano-Electronics (2012)
Heersche, H. B., et al.: In situ imaging of electromigration-induced nanogap formation by transmission electron microscopy. Appl. Phys. Lett. (2007). doi:10.1063/1.2767149
O’Neill, K., Osorio, E. A., Van der Zant, H. S. J.: Self-breaking in planar few-atom Au constrictions for nanometer-spaced electrodes. Appl. Phys. Lett. 90, 133109 (2007)
Agrait, N., et al.: Quantum properties of atomic-sized conductors. Phys. Reports 377, 81–279 (2003)
Munoz, R.C., Arenas, C., Kremer, G.: Surface roughness and surface-induced resistivity of gold films on mica: influence of the theoretical modelling of electronsurface scattering. J. Phys.: Condens. Matter 12, 379 (2000)
Fowler, R. H., Nordheim, L.: Electron emission in intense electric fields. Proc. Royal Soc. A 119, 173–181 (1928)
Mangin, A., et al.: Reduced work functions in gold electromigrated nanogaps. Phys. Rev. B (2009). doi:10.1103/PhysRevB.80.235432
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This work was supported by “Russian Fond of Basic Research” (grant nos. 12-07-00816-a, 14-02-31766, 14-07-31328)
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Dagesyan, S.A., Stepanov, A.S., Soldatov, E.S. et al. Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistor. J Supercond Nov Magn 28, 787–790 (2015). https://doi.org/10.1007/s10948-014-2875-7
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DOI: https://doi.org/10.1007/s10948-014-2875-7