Original Paper

Journal of Superconductivity and Novel Magnetism

, Volume 26, Issue 3, pp 687-691

First online:

Optical Properties of Mn-Implanted GaN Nanorods

  • Im Taek YoonAffiliated withQuantum Functional Semiconductor Research Center, Dongguk University Email author 
  • , Yoon ShonAffiliated withQuantum Functional Semiconductor Research Center, Dongguk University
  • , Young S. ParkAffiliated withCenter for Superfunctional Materials, Pohang University of Science and Technology
  • , T. W. KangAffiliated withQuantum Functional Semiconductor Research Center, Dongguk University

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We have investigated the optical properties of vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, Arrhenius plots of the intensities of the Mn acceptor give a thermal activation energy of Δ=350 meV, indicating that the thermal quenching of the Mn-related PL peak is due to the dissociation of an acceptor-bound hole from the temperature-dependent PL spectra. This suggests that the Mn-bound holes in GaN nanorods exhibit the impurity states predicted by the hydrogen model.


Photoluminescence Mn-Implantation Nanorods Semi-conducting III–V materials