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Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

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Abstract

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.

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Authors and Affiliations

  1. Physical Sciences and Engineering Division, Sensing, Magnetism and Microsystems Group, King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia

    A. N. Useinov & J. Kosel

  2. Solid State Physics Department, Kazan State University, 420008, Kazan, Russian Federation

    N. K. Useinov & L. R. Tagirov

Authors
  1. A. N. Useinov
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  2. N. K. Useinov
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  3. L. R. Tagirov
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  4. J. Kosel
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Correspondence to N. K. Useinov.

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Useinov, A.N., Useinov, N.K., Tagirov, L.R. et al. Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction. J Supercond Nov Magn 25, 2573–2576 (2012). https://doi.org/10.1007/s10948-011-1221-6

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  • DOI: https://doi.org/10.1007/s10948-011-1221-6

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