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Electron–Hole Asymmetry Driven Surface Charge Expulsion

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Abstract

We study an Ising-like dynamic Hubbard (IDHB) model using dynamical mean field theory with an embedding potential. The prominent characteristic of the IDHB model is the broken electron–hole symmetry. Our calculations indicate that the electron–hole asymmetry enhances electron expulsion toward the surface of a semi-infinite bulk. Since correlated hopping amplitude produces the electron–hole asymmetry, it strongly affects the electron expulsion toward the surface.

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Acknowledgments

The author thank Dr. Reza Nourafkan and Dr. Frank Marsiglio for their useful advice. This work is funded by the Vietnam National Foundation for Science and Technology Development (NAFOSTED) under the Grant Number 103.02-2012.73

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Authors and Affiliations

  1. Computational Material Science Lab, Faculty of Physics, Hanoi University of Science, Vietnam National University, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam

    Giang H. Bach

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  1. Giang H. Bach
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Correspondence to Giang H. Bach.

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Bach, G.H. Electron–Hole Asymmetry Driven Surface Charge Expulsion. J Low Temp Phys 181, 253–262 (2015). https://doi.org/10.1007/s10909-015-1342-6

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  • DOI: https://doi.org/10.1007/s10909-015-1342-6

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