Atomic Layer Deposition of Tunnel Barriers for Superconducting Tunnel Junctions
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- Moyerman, S.M., Feng, G., Krayer, L. et al. J Low Temp Phys (2014) 176: 237. doi:10.1007/s10909-014-1114-8
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We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal–insulating–superconducting or superconducting–insulating–superconducting tunnel junctions. We use atomic layer deposition and an aluminum wetting layer to form a nanometer scale insulating barrier on gold films. Electronic transport measurements confirm that single-particle electron tunneling is the dominant transport mechanism, and the measured current–voltage curves demonstrate the viability of using these devices as self-calibrated, low temperature thermometers with a wide range of tunable parameters. This work represents a promising first step for superconducting technologies with deposited tunnel junction barriers. The potential for fabricating high performance junction refrigerators is also highlighted.