Electrical Noise and Transport Properties of Graphene
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- Sun, N., Tahy, K., Xing, H. et al. J Low Temp Phys (2013) 172: 202. doi:10.1007/s10909-013-0866-x
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We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorporates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general characteristics of the data.