Article

Journal of Low Temperature Physics

, Volume 172, Issue 3, pp 202-211

Electrical Noise and Transport Properties of Graphene

  • Nan SunAffiliated withDepartment of Physics, University of Notre Dame
  • , Kristof TahyAffiliated withDepartment of Electrical Engineering, University of Notre Dame
  • , Huili XingAffiliated withDepartment of Electrical Engineering, University of Notre Dame
  • , Debdeep JenaAffiliated withDepartment of Electrical Engineering, University of Notre Dame
  • , Gerald ArnoldAffiliated withDepartment of Physics, University of Notre Dame
  • , Steven T. RuggieroAffiliated withDepartment of Physics, University of Notre Dame Email author 

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Abstract

We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorporates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general characteristics of the data.

Keywords

Graphene 1/f noise Transport Tunneling