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Quantum Interference of Surface States in Bismuth Nanowires in Transverse Magnetic Fields

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Abstract

We report the results of studies of the magnetoresistance (MR) and electric field effect (EFE) of single-crystal Bi nanowires with diameter d<80 nm at low temperatures. Single-crystal nanowire samples were prepared by the Taylor-Ulitovsky technique; they were cylindrical single crystals with the \((10\bar{1}1)\) orientation along the wire axis where the C 3 axis was inclined at an angle of 70∘ to the wire axis. According to theory of S. Murakami, bismuth bilayers can exhibit the quantum spin Hall effect. A Bi crystal can be viewed as a stacking of bilayers with a honeycomblike lattice structure along the [111] direction. An interpretation of transverse MR oscillations with using this theory is presented.

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Acknowledgements

This work was partially supported by SCOPES Grant no. IZ73ZO_127968 and Grant ASM 11.836.05.05A.

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Authors and Affiliations

  1. Ghitu Institute of Electronic Engineering and Nanotechnologies, ASM, Chisinau, Moldova

    L. A. Konopko, A. A. Nikolaeva & L. A. Burceacov

  2. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland

    L. A. Konopko & A. A. Nikolaeva

  3. Department of Chemistry, Howard University, 500 College St. N.W., Washington, DC, 20059, USA

    T. E. Huber

Authors
  1. L. A. Konopko
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  2. T. E. Huber
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  3. A. A. Nikolaeva
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  4. L. A. Burceacov
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Correspondence to L. A. Konopko.

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Konopko, L.A., Huber, T.E., Nikolaeva, A.A. et al. Quantum Interference of Surface States in Bismuth Nanowires in Transverse Magnetic Fields. J Low Temp Phys 171, 677–684 (2013). https://doi.org/10.1007/s10909-012-0850-x

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  • DOI: https://doi.org/10.1007/s10909-012-0850-x

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