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Selective boron diffusion without masking layer using boric acid for solar cell emitter formation

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Abstract

In this article, we have used boric acid as a source to form the solar cell emitter in a selective way. Moreover, in order to optimize the process, the conditions of boron diffusion were investigated. It was found that for 5% boric acid in deionized (DI) water, the spinning speed of 3000 rpm for 15 s and dry-out process at 200 °C are the most appropriate conditions. Additionally, by using the boric acid source, a selective doping method was developed in this study. Therefore, we have demonstrated that it is possible to perform both light and heavy (under contacts) dopings on different areas of the wafer without any extra masking layer (e.g. silicon dioxide) and undergoing only one drive-in process.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

    P. Ebrahimi, M. Kolahdouz, M. Norouzi, H. Aghababa, A. Aletayeb & E. Asl-Soleimani

  2. Faculty of Engineering, College of Farabi, University of Tehran, Tehran, Iran

    H. Aghababa

Authors
  1. P. Ebrahimi
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  2. M. Kolahdouz
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  3. M. Norouzi
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  4. H. Aghababa
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  5. A. Aletayeb
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  6. E. Asl-Soleimani
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Corresponding authors

Correspondence to M. Kolahdouz or H. Aghababa.

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Ebrahimi, P., Kolahdouz, M., Norouzi, M. et al. Selective boron diffusion without masking layer using boric acid for solar cell emitter formation. J Mater Sci: Mater Electron 28, 10794–10798 (2017). https://doi.org/10.1007/s10854-017-6856-z

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  • DOI: https://doi.org/10.1007/s10854-017-6856-z

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