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Machining damage of monocrystalline silicon by specific crystallographic plane cutting of wire electrical discharge machining

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Abstract

The machining damage on the certain crystal face of single crystal silicon, the manufacture of which are under diverse parameters of wire electrical discharge machining (WEDM), is tested by means of the micro-observation and X-ray diffraction rocking curve method. In the process of monocrystalline silicon machined by WEDM, when the pulse width is small, the basic methods of material removal are melting and gasification, which are also called normal removal methods. When the pulse width increases to a certain degree beyond the normal removal, thermal spalling removal also occurs, which is considered a compound removal method. The depth of machining damage is difficult to control. The structure of machining damage under two conditions is divided into normal removal and compound removal in this study. To make the depth of machining damage easy to control, compound removal should be avoided when processing the single crystal silicon by certain crystal face cutting of WEDM. Such an approach can provide the premise and guarantee for the subsequent processing of single crystal silicon with certain crystal face in the future.

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Acknowledgements

This paper is supported by Funding of Jiangsu Innovation Program for Graduate Education (the Fundamental Research Funds for the Central Universities) (Grant No. KYLX15_0291) and the National Natural Science Foundation of China (Grant Nos. 51575271, 11275274, U1532106). We would like to thank all of people who contributed to this project.

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Authors and Affiliations

  1. College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Yu Dao Street, Nanjing, 210016, China

    Mengxing Ge, Zhidong Liu, Haoran Chen, Lida Shen, Mingbo Qiu & Zongjun Tian

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  1. Mengxing Ge
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  2. Zhidong Liu
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  3. Haoran Chen
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  4. Lida Shen
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Correspondence to Zhidong Liu.

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Ge, M., Liu, Z., Chen, H. et al. Machining damage of monocrystalline silicon by specific crystallographic plane cutting of wire electrical discharge machining. J Mater Sci: Mater Electron 28, 8437–8445 (2017). https://doi.org/10.1007/s10854-017-6562-x

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  • DOI: https://doi.org/10.1007/s10854-017-6562-x

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