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Effect of complexing agent on the chemically deposited ZnS thin film

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Abstract

Zinc sulfide (ZnS) thin films have been deposited onto fluorine doped tin oxide and microscopic glass substrates from an aqueous alkaline reaction by chemical bath deposition. The effect of concentrations of hydrazine hydrate (HyH) (complexing agent) on the deposit is studied. X-ray analysis confirm the growth of nanocrystalline ZnS thin films with reflections (111), (220) and (311) correspond to cubic crystalline phase. TEM results support the growth of cubic ZnS layers. The energy band gap was successfully tailored from 2.77 to 3.80 eV. Photoluminescence study indicates a strong band-edge emission with some defect like vacancies. It was also noticed that HyH plays an important role on the nucleation. The remarkable improvement in the growth rate of ZnS thin films have been observed upon increasing the contents of HyH. Nearly stoichiometric ZnS layer was obtained upon annealing prepared with 2.5 M HyH. The crystallinity was found to be increased upon annealing the layers. The ideality factor for the ZnS layers prepared with 0 and 1.0 M HyH were obtained ~1.71 and 1.24, respectively. The capacitance–voltage plots behave according to Schottky–Mott theory. The doping concentrations ~1017 and 1018 cm−3 were calculated for the layers deposited with 0 and 1.0 M HyH, respectively.

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Acknowledgements

The authors would like to thank the DST (SERI), DST/TM/SERI/FR/124(G), DRDO, (ERIP/ER/10003866/M/01/1388) and BARTI for financial support.

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Authors and Affiliations

  1. Electrochemical Laboratory, Department of Physics, Savitribai Phule Pune University (Formerly University of Pune), Pune, 411007, India

    Priyanka U. Londhe, Ashwini B. Rohom, Ganesh R. Bhand, Sujata Jadhav, Manorama G. Lakhe & Nandu B. Chaure

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  1. Priyanka U. Londhe
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  2. Ashwini B. Rohom
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  3. Ganesh R. Bhand
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  4. Sujata Jadhav
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Correspondence to Nandu B. Chaure.

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Londhe, P.U., Rohom, A.B., Bhand, G.R. et al. Effect of complexing agent on the chemically deposited ZnS thin film. J Mater Sci: Mater Electron 28, 5207–5214 (2017). https://doi.org/10.1007/s10854-016-6177-7

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  • DOI: https://doi.org/10.1007/s10854-016-6177-7

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