Skip to main content
SpringerLink
Log in

Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Au/ZnO/n-GaAs Schottky barrier diodes (SBDs) have been examined by the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The frequency dependence characteristics of measurements were obtained under various illumination levels at room temperature. The C and G/ω relation was observed as the decrement in capacitance corresponds to an increment in conductance. The increment of negative capacitance (NC) values by high frequency at forward biases was ascribed to the series resistance, interface states and interfacial layer. Considering the illumination intensity, the NC values were observed to increase with the decreasing illumination while the G/ω values increase with the increasing illumination. This behavior was referred to the increments in the polarization and carriers in the SBDs. The adverse impacts of the voltage dependent resistivity were decreased with increasing illumination levels. Eventually, a strong interaction between the electrical properties of SBDs and the frequency, illumination and applied bias voltage was demonstrated by experimental results.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. S.M. Sze, Physics Semiconductor Devices. (Wiley, New York, 1981)

    Google Scholar 

  2. P. Macháč, V. Peřina, J. Mater. Sci. Mater. Electron. 23, 2282–2288 (2012)

    Article  Google Scholar 

  3. D. Korucu, H. Efeoglu, A. Turut, Ş. Altındal, Mater. Sci. Semicond. Proc. 15, 480–485 (2012). doi:10.1016/j.mssp.2012.03.005

    Article  Google Scholar 

  4. T.S. Huang, R.S. Fang, Solid State Electron. 37, 1461–1466 (1994). doi:10.1016/0038-1101(94)90152

    Article  Google Scholar 

  5. S.O. Tan, H. Uslu Tecimer, O. Çiçek, H. Tecimer, İ. Orak, Ş. Altındal, J. Mater. Sci. Mater. Electron. 27, 8340–8347 (2016). doi:10.1007/s10854-016-4843-4

    Article  Google Scholar 

  6. M. E. Aydın, M. Soylu, F. Yakuphanoglu, W.A. Farooq, Microelectron. Eng. 88, 867–871 (2011). doi:10.1016/j.mee.2010.11.012

    Article  Google Scholar 

  7. S. Demirezen, E. Özavcı, Ş. Altındal, Mater. Sci. Semicond. Proc. 23, 1–6 (2014). doi:10.1016/j.mssp.2014.02.022

    Article  Google Scholar 

  8. J.M. Borrego, R.J. Gutmann, S. Ashok, Solid State Electron. 20, 125–132 (1977)

    Article  Google Scholar 

  9. F.A. Padovani, G.G. Sumner, J. Appl. Phys 36, 3744–3747 (1965)

    Article  Google Scholar 

  10. A.T. Sharma, Shahnawaz, S. Kumar, Y.S. Katharria, D. Kanjilal, Nucl. Instr. Meth. Phys. Res. B 263, 424 (2007)

    Article  Google Scholar 

  11. M.K. Hudait, P. Venkateswarlu, S.B. Krupanidhi, Solid State Electron. 45, 133–141 (2001)

    Article  Google Scholar 

  12. N. Başman, O. Uzun, S. Fiat, C. Alkan, G. Çankaya, J. Mater. Sci. Mater. Electron. 13, 273–275 (2002). doi:10.1007/s10854-012-0819-1

    Article  Google Scholar 

  13. S. Demirezen, Ş. Altındal, İ. Uslu, Current, Appl. Phys 13, 53–59 (2013)

    Google Scholar 

  14. T.T.A. Tuan, D.-H. Kuo, C.-C. Li, W.-C. Yen, J. Mater. Sci. Mater. Electron. 25, 3264–3270 (2014). doi:10.1007/s10854-014-2012-1

    Article  Google Scholar 

  15. V.V. lchenko, V.V. Marin, S.D. Lin, K.Y. Panarn, A.A. Buyanin, O.V. Tretyak, J. Phys. D Appl. Phys. 41, 235107 (2008)

    Article  Google Scholar 

  16. J.K. Jha, R. S.-Ortiz, J. Du, N.D. Shepherd, J. Mater. Sci. Mater. Electron. 25, 1492–1498 (2014). doi:10.1007/s10854-014-1758-9

    Article  Google Scholar 

  17. D. Ahn, S.-H. Park, Measurement 46, 1698–1703 (2013). doi:10.1016/j.measurement.2013.01.004

    Article  Google Scholar 

  18. C. Tsiarapas, D. Girginoudi, N. Georgoulas, Superlattices Microstruct. 75, 171–182 (2014). doi:10.1016/j.spmi.2014.07.041

    Article  Google Scholar 

  19. C.S. Singh, G. Agarwal, G. Durga Rao, Sujeet Chaudhary, R. Singh, Mater. Sci. Semicond. Proc. 14, 1–4 (2011). doi:10.1016/j.mssp.2010.12.009

    Article  Google Scholar 

  20. E.H. Rhoderick, R.H. Williams, Metal–Semiconductor Contacts, (Clarandon Press, Oxford University Press, Cambridge, 1988), pp. 20–45

    Google Scholar 

  21. A. Singh, Solid State Electron. 28, 223–232 (1985)

    Article  Google Scholar 

  22. H.C. Card, E.H. Rhoderick, J Phys D 4, 1589–1601 (1971)

    Article  Google Scholar 

  23. V. R. Reddy, V. Janardhanam, M.-S. Kang, C.-J. Choi, J. Mater. Sci. Mater. Electron. 25, 2379–2386 (2014). doi:10.1007/s10854-012-0819-1

    Article  Google Scholar 

  24. J. Bisquert, G. Garcia-Belmonte, A. Pitarch, H.J. Bolink, Chem. Phys. Lett. 422, 184–191 (2006)

    Article  Google Scholar 

  25. P. Chattopadhyay, B. Raychaudhuri, Solid State Electron. 35, 875–892 (1992)

    Article  Google Scholar 

  26. P. Cova, A. Sing, R.A. Masut, J. Appl. Phys 82, 5217–5226 (1997)

    Article  Google Scholar 

  27. S. Zeyrek, E. Acaroğlu, Ş. Altındal, S. Birdoğan, M.M. Bülbül, Curr. Appl. Phys. 13, 1225–1230 (2013)

    Article  Google Scholar 

  28. H. Uslu, Ş. Altındal, U. Aydemir, İ. Dökme, İ.M. Afandiyeva, J. Alloys Compd. 503, 96–102 (2010)

    Article  Google Scholar 

  29. E. Arslan, Y. Şafak, Ş. Altındal, Ö. Kelekçi, E. Özbay. J. Non-Cryst. Solids 356, 1006–1011 (2010)

    Article  Google Scholar 

  30. J. Werner, A.F.J. Levi, R.T. Tung, M. Anzlowar, M. Pinto, Phys. Rev. Lett. 60, 53 (1988)

    Article  Google Scholar 

  31. M. Ershov, H.C. Liu, L. Li, M. Buchanan, Z.R. Wasilewski, A.K. Jonscher, IEEE Trans. Electron Devices 45, 2196 (1998)

    Article  Google Scholar 

  32. A.A. Al-Ghamdi, A. Dere, A. Tataroğlu, B. Arif, F. Yakuphanoglu, F. El-Tantawy, W.A. Farooq, J. Alloy Compd. 650, 692–699 (2015)

    Article  Google Scholar 

  33. H.G. Çetinkaya, D.E. Yıldız, Ş. Altındal, Int. J. Mod. Phys. B. 29 1450237 (2015). doi:10.1142/S0217979214502373

    Article  Google Scholar 

  34. A.G.U. Perera, W.Z. Shen, M. Ershov, H.C. Liu, M. Buchanan, W.J. Schaff, App. Phys. Lett. 74, 3167 (1999)

    Article  Google Scholar 

  35. C.H. Champness, W.R. Clark, App. Phys. Lett. 56(12), 1104–1106 (1990). doi:10.1063/1.102581

    Article  Google Scholar 

  36. X. Wu, E.S. Yang, H.L. Evans, J. Appl. Phys. 68, 2845 (1990). doi:10.1063/1.346442

    Article  Google Scholar 

  37. A. Tataroğlu, O. Dayan, N. Özdemir, Z. Şerbetci, A.A. Al-Ghamdi, A. Dere, F. El-Tantawy, F. Yakuphanoglu, Dyes Pigments 132, 64–71 (2016). doi:10.1016/j.dyepig.2016.04.044

    Article  Google Scholar 

  38. A.S. Dahlan, A. Tataroğlu, A.A. Al-Ghamdi, A.A. Al-Ghamdi, S. Bin-Omran, Y. Al-Turki, F. El-Tantawy, F. Yakuphanoglu, J. Alloy Compd. 646, 1151–1156 (2015)

    Article  Google Scholar 

  39. H. Yan, E. Shunsuke, H. Yusuke, O. Hidenori, Chem. Lett. 36(8), 986–990 (2007)

    Article  Google Scholar 

  40. R.L. Van Meirhaeghe, W.H. Lafle´re, F. Cardon, J. Appl. Phys. 76 403–406 (1994). doi:10.1063/1.357089

    Article  Google Scholar 

  41. H. Uslu, S. Altındal, I. Dokme, J. Appl. Phys 108, 104501 (2010)

    Article  Google Scholar 

  42. E.H. Nicollian, J.R. Brews, Metal Oxide Semiconductor (MOS) Physics and Technology. (Wiley, New York, 1982)

    Google Scholar 

Download references

Acknowledgements

This study has been funded by Scientific Research Project (BAP) Coordinatorship of Karabuk University with project codes of KBU-BAP-14/2-DR-005 & KBU-BAP-14/2-DR-006.

Author information

Authors and Affiliations

  1. Karabuk Vocational School, Karabuk University, Karabük, Turkey

    S. O. Tan

  2. Department of Electrical and Electronic Engineering, Faculty of Engineering, Karabük University, Karabük, Turkey

    H. Uslu Tecimer

  3. Arac Vocational School, Kastamonu University, Kastamonu, Turkey

    O. Çiçek

  4. Department of Mechatronics Engineering, Faculty of Technology, Karabük University, Karabük, Turkey

    H. Tecimer

  5. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Ş. Altındal

Authors
  1. S. O. Tan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Uslu Tecimer
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. O. Çiçek
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Tecimer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Ş. Altındal
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. O. Tan.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Tan, S.O., Tecimer, H.U., Çiçek, O. et al. Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes. J Mater Sci: Mater Electron 28, 4951–4957 (2017). https://doi.org/10.1007/s10854-016-6147-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-016-6147-0

Keywords

Search

Navigation