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Effect of post-annealing time on the properties of sputtered Al-doped ZnO thin films

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Abstract

Al doped ZnO (AZO) thin films prepared by RF magnetron sputtering were annealed in rapid thermal annealing system under various post-annealing times. The effect of post-annealing time on the structural, optical, and electrical properties of AZO film was investigated, systematically. As the post-annealing time elongated, the electrical resistivity was improved due to an increase in the carrier concentration and the mobility. X-ray photoelectron spectroscopy showed that the long post-annealing time increased the oxygen vacancy and decreased the surface bonding caused by the O2 absorption on surface, resulting in increase of the carrier concentration and the mobility. Therefore, the post-annealing time plays an important role in determining the nature of bonding in AZO thin films and is a powerful method to obtain better electrical properties.

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Authors and Affiliations

  1. Advanced Development Team, Samsung Electronics Co. Ltd, Yongin, Gyeonggi, 446-711, South Korea

    Deok-Kyu Kim

  2. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk, 360-746, South Korea

    Hong-Bae Kim

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  1. Deok-Kyu Kim
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  2. Hong-Bae Kim
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Correspondence to Deok-Kyu Kim.

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Kim, DK., Kim, HB. Effect of post-annealing time on the properties of sputtered Al-doped ZnO thin films. J Mater Sci: Mater Electron 27, 11366–11370 (2016). https://doi.org/10.1007/s10854-016-5261-3

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  • DOI: https://doi.org/10.1007/s10854-016-5261-3

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