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Sintering temperature dependence on microstructure and non-ohmic properties of ZVMND ceramic semiconductors

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Abstract

This study analyzed the effects of sintering temperature on the microstructure and electrical properties of ZVMND (ZnO–V2O5–MnO2–Nb2O5–Dy2O3) ceramic semiconductors. The average grain size increased from 4.0 to 11.5 μm with the increase of sintering temperature. The density of the sintered pellets decreased from 5.56 to 5.47 g/cm3 with the increase of sintering temperature. The breakdown field noticeably decreased from 7012 to 1385 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900 °C exhibited excellent non-ohmic properties, in which the non-ohmic coefficient is 60.0 and the leakage current density is 0.18 mA/cm2. The dielectric constant markedly increased from 472.2 to 2022.4 with the increase of sintering temperature. However, the dissipation factor exhibited a fluctuation between 0.195 and 0.384. These ceramic compositions and sintering conditions will be applied to the development of advanced multilayered varistors with silver as an inner electrode.

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Authors and Affiliations

  1. Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan, 47340, Republic of Korea

    Choon-W. Nahm

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  1. Choon-W. Nahm
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Correspondence to Choon-W. Nahm.

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Nahm, CW. Sintering temperature dependence on microstructure and non-ohmic properties of ZVMND ceramic semiconductors. J Mater Sci: Mater Electron 27, 9520–9525 (2016). https://doi.org/10.1007/s10854-016-5003-6

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  • DOI: https://doi.org/10.1007/s10854-016-5003-6

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