Erratum to: Structural and electrical properties of Ho³⁺-modified Pb(Zn_1/3Nb_2/3)O₃–9PbTiO₃ single crystals

Erratum to: J Mater Sci: Mater Electron DOI 10.1007/s10854-016-4286-y

The original version of the article contains errors about the temperature dependence of permittivity of PZN-9PT single crystals. The correct results are showed as follows:

T _R–T and T _C of PZN–9PT single crystals were 363 and 447 K, respectively. The diffuse factor δ _A of PZN–9PT was 26.03 K (Table 2; Figs. 4, 5).

Table 2 The fitting result for the as-grown single crystals with the Lorentz-type Law at frequency of 100 kHz

Fig. 4

Temperature dependence of dielectric permittivity and loss at different frequencies (100 Hz–100 kHz) for the as-grown single crystals: a PZN–9PT crystals, b Ho³⁺-modified PZN–9PT crystals, respectively

Fig. 5

Dielectric permittivity as a function of temperature for the as-grown single crystals at 100 kHz: a PZN–9PT crystals, b Ho³⁺-modified PZN–9PT crystals. The solid line and the symbol stand for the fitting to the Lorentz-type law and the experimental data, respectively

According to the correct temperature dependence of dielectric permittivity of the PZN–9PT single crystals, the changed sentences of the abstract and conclusion are as follows:

Revised Abstract: Ho³⁺-modified Pb(Zn_1/3Nb_2/3)O₃–9PbTiO₃ (PZN–9PT) single crystals were grown through a flux method. Phase structure and microstructural morphology of the as-grown single crystals were performed by X-ray diffraction analysis and scanning electron microscopy. The refinement of the lattice parameters were obtained by the Rietveld method. The electrical properties of PZN–9PT single crystals were improved significantly by the modification of Ho³⁺ ions. The rhombohedral–tetragonal phase transition temperature, coercive field at 15 kV cm⁻¹, and remnant polarization of Ho³⁺-modified PZN-9PT single crystals were increased by 12 K, 2.4 kV cm⁻¹, and 7.5 μC cm⁻², respectively (i.e., 375.45 K, 5.9 kV cm⁻¹, and 38.40 μC cm⁻², respectively). Furthermore, Lorentz-type law was used to describe the dielectric relaxor behavior of the as-grown single crystals.

Revised Conclusion: Ho³⁺-modified PZN–9PT single crystals were successfully grown by using the flux method. The as-grown single crystals had single perovskite structure. The enhancement of diffused phase transition and frequency dispersion was observed in the Ho³⁺-modified PZN–9PT single crystals. The diffuse factor δ _A ranged from 26.03 to 48.34 K due to the modification of Ho³⁺ ions, indicating the Ho³⁺-modified PZN–9PT single crystals exhibited more obvious relaxor behavior. The T _R–T of the PZN–9PT single crystals were increased by about 12 K under the modification of Ho³⁺ ions, i.e., approximately 375.45 K. The P _r (~38.40 μC cm⁻²) and E _C (~5.9 kV cm⁻¹) of the single crystals were higher than those of PZN–9PT crystals.