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Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications

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Abstract

(K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 [0.97KNN–0.03BZN − xCeO2] lead-free ceramics were synthesized and the phase structure, microstructure and dielectric properties were investigated. Dielectric studies reveal that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics show excellent dielectric properties at a broad usage temperature range (150–350 °C): the dielectric permittivity is near 1900 (at 10 kHz) with the capacitance variation (ΔC/C150 °C) no more than ±10 %; the temperature coefficient of permittivity (TCε) is as low as −162 ppm/°C; the corresponding dielectric loss is less than 2.5 %. These results indicate that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics are promising candidates for high temperature multilayer ceramic capacitor applications.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 51072165), the fund of State Key Laboratory of Solidification Processing in NWPU (No. KP200901), Doctor Start fund of Baoji University of arts. & sci. (ZK15044), and the fund of Shaanxi Key Laboratory of Phytochemistry (13JS006).

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  1. Shaanxi Key Laboratory of Phytochemistry, Department of Chemistry, Baoji University of Arts and Sciences, Baoji, 721013, Shaanxi, China

    Hualei Cheng

  2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, Shaanxi, China

    Hualei Cheng, Wancheng Zhou, Hongliang Du, Fa Luo & Wenrui Wang

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  1. Hualei Cheng
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Cheng, H., Zhou, W., Du, H. et al. Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications. J Mater Sci: Mater Electron 26, 9097–9106 (2015). https://doi.org/10.1007/s10854-015-3597-8

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