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Effects of sputtering power on structural, electrical and optical properties of Cr-doped ZnO thin films prepared by magnetron sputtering

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Abstract

Cr-doped ZnO thin films with Cr content of 2 at.% were deposited on glass substrates with various sputtering powers by radio frequency magnetron sputtering technique. The effects of the sputtering power on the crystallographic structures, electrical and optical properties of the thin films were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), four-point probe measurement and UV–Vis spectrophotometer. The XRD patterns and SEM images indicated that the crystallinity of Zn0.98Cr0.02O thin films was markedly improved with sputtering power up to 150 W, but worsened above this value. The lowest electrical resistivity of 1.15 × 10−3 Ω cm was obtained at 150 W. The optical band gap of the films increased from 3.38 to 3.54 eV with increase of sputtering power from 110 to 170 W. The UV–Vis transmittance spectrum revealed that the films showed a high average transmittance of above 85 % in the visible range.

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Acknowledgments

This work has been supported by the Natural Science Foundation of China (Granted Nos. 51474069, 51101027, 51374072), Program for New Century Excellent Talents in Heilongjiang Provincial University (Granted No. 1253-NCET-002) and Youth Science Foundation of Northeast Petroleum University (Granted No. ky120232).

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Authors and Affiliations

  1. School of Electronic Science, Northeast Petroleum University, Fa-Zhan Road 199, Daqing, 163318, China

    Chang-Feng Fu, Lian-Fu Han & Chao Liu

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  1. Chang-Feng Fu
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  2. Lian-Fu Han
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  3. Chao Liu
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Correspondence to Chao Liu.

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Fu, CF., Han, LF. & Liu, C. Effects of sputtering power on structural, electrical and optical properties of Cr-doped ZnO thin films prepared by magnetron sputtering. J Mater Sci: Mater Electron 26, 493–497 (2015). https://doi.org/10.1007/s10854-014-2426-9

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  • DOI: https://doi.org/10.1007/s10854-014-2426-9

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