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High pressure synthesis of Te-doped CoSb3 with enhanced thermoelectric performance

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Abstract

Te-doped CoSb3 skutterudites were successfully synthesized with high pressure synthesis method followed by spark plasma sintering. The introducing of Te atoms into the lattice sites of CoSb3 resulted in n-type electrical conductivity, which increased with elevated Te doping level. An enhanced power factor, larger than 4,000 µWm−1K−2 for temperatures higher than 650 K, was observed for Co4Sb11.5Te0.5. This is a significant value for skutterudites substituted with a single element. Meanwhile, the thermal conductivity of Te-doped CoSb3 was greatly suppressed due to stronger electron–phonon scattering. The optimized Co4Sb11.5Te0.5 showed a ZT value of 1.15 at 883 K, which rivals the state-of-the-art single elemental filled skutterudites.

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Acknowledgments

This work was supported by the National Basic Research Program of China (2011CB808205), the National Science Foundation of China (51072175, 51172196, 51121061, 51201149, and 51332005), and the Natural Science Foundation for Distinguished Young Scholars of Hebei Province of China (E2014203150).

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Authors and Affiliations

  1. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, Hebei, China

    Qian Zhang, Xiaohui Li, Yulong Kang, Long Zhang, Dongli Yu, Julong He, Zhongyuan Liu, Yongjun Tian & Bo Xu

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  1. Qian Zhang
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  2. Xiaohui Li
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  3. Yulong Kang
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Correspondence to Bo Xu.

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Zhang, Q., Li, X., Kang, Y. et al. High pressure synthesis of Te-doped CoSb3 with enhanced thermoelectric performance. J Mater Sci: Mater Electron 26, 385–391 (2015). https://doi.org/10.1007/s10854-014-2411-3

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  • DOI: https://doi.org/10.1007/s10854-014-2411-3

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