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Microwave dielectric properties of H3BO3-doped Ca0.61La0.39Al0.39Ti0.61O3 ceramics

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Abstract

Preparation and microwave dielectric properties of H3BO3-doped Ca0.61La0.39Al0.39Ti0.61O3 ceramics have been widely investigated. As H3BO3 addition increased from 0.02 to 2.00 wt%, a single phase with tetragonal structure was formed. Boron diffusion and location at vacancies and grain boundaries in ceramic matrix caused the decrease of the lattice parameters, and the addition of H3BO3 resulted in the liquid phase sintering mechanism, which effectively improved their relative densities and lowered the sintering temperature. The H3BO3-doped Ca0.61La0.39Al0.39Ti0.61O3 ceramics have a low sintering temperature of 1,340 °C and a stable τf value. Microwave dielectric properties of 0.02 wt% H3BO3-doped Ca0.61La0.39Al0.39Ti0.61O3 ceramics were: εr = 41.6, Q × f = 48,565 GHz and τf = −0.66 ppm/°C. They could be considered as promising candidate materials for base stations applications.

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Acknowledgments

This work is supported by National Natural Science Funds of China (Grant No. 51402039).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Bin Tang, Zi-xuan Fang, Hao Li, Lin Liu & Shu-ren Zhang

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  1. Bin Tang
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  2. Zi-xuan Fang
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  3. Hao Li
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  4. Lin Liu
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  5. Shu-ren Zhang
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Correspondence to Bin Tang.

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Tang, B., Fang, Zx., Li, H. et al. Microwave dielectric properties of H3BO3-doped Ca0.61La0.39Al0.39Ti0.61O3 ceramics. J Mater Sci: Mater Electron 26, 300–306 (2015). https://doi.org/10.1007/s10854-014-2399-8

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