Abstract
Thickness and compositional dependence of optical properties of Pb9Se71Ge20−xSnx (8 ≤ x ≤ 12) glass has been studied. Various optical constants such as refractive index, extinction coefficient and optical band gap have been determined by analyzing optical transmittance data in the wavelength range of 200–3,500 nm. Density of localized states and disorder plays a crucial role in deciding the optical properties of amorphous semiconductors. Refractive index and extinction coefficient increase as Sn content increase in material. With the rise in thickness, there may be increase in order of short range order of the film and continuous random network simultaneously, result in reduced band gap. The isoelectronic substitutions of Ge by Sn in the glassy system also contribute to reduction in optical band gap of the material.
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Modgil, V., Rangra, V.S. Composition and thickness dependant optical study of a-Pb–Se–Ge–Sn glassy thin films. J Mater Sci: Mater Electron 25, 5428–5432 (2014). https://doi.org/10.1007/s10854-014-2324-1
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DOI: https://doi.org/10.1007/s10854-014-2324-1