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Effect of Zr substitution on microwave dielectric properties of Zn2SnO4 ceramics

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Abstract

The microwave dielectric properties of Zn2(Sn(1−x)Zrx)O4 ceramics were examined with a view to their exploitation for mobile communication. The Zn2(Sn(1−x)Zrx)O4 ceramics were prepared by the conventional solid-state method with various amount of Zr substitution. The diffraction peaks of Zn2(Sn(1−x)Zrx)O4 ceramics did not vary significantly as x varied. A density of 6.10 g/cm3 was obtained for Zn2(Sn0.99Zr0.01)O4 ceramic, sintered at 1,225 °C for 4 h. Dielectric constant (ɛ r ) of 9.6, quality factor (Q × f) of 87,000 GHz, and temperature coefficient of resonant frequency (τ f ) of −51 ppm/°C were obtained for Zn2(Sn0.99Zr0.01)O4 ceramics that were sintered at 1,225 °C for 4 h.

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Acknowledgments

The authors would like to thank the National Science Council in Taiwan, for financially supporting this research under Contract No. NSC 102-2622-E-269-009-CC3.

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Authors and Affiliations

  1. Department of Electrical Engineering, Lunghwa University of Science and Technology, Gueishan Shiang, Taoyuan County, Taiwan

    Yih-Chien Chen, Min-Zhe Weng & Jia-Mao Hong

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  1. Yih-Chien Chen
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  2. Min-Zhe Weng
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  3. Jia-Mao Hong
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Correspondence to Yih-Chien Chen.

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Chen, YC., Weng, MZ. & Hong, JM. Effect of Zr substitution on microwave dielectric properties of Zn2SnO4 ceramics. J Mater Sci: Mater Electron 25, 5000–5005 (2014). https://doi.org/10.1007/s10854-014-2263-x

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  • DOI: https://doi.org/10.1007/s10854-014-2263-x

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