Abstract
The Ag/n-ZnO/p-Si(100)/Al heterojunction diodes were fabricated by pulsed laser deposition of zinc oxide (ZnO) thin films on p-type silicon. The X-ray diffraction analysis shows the formation of ZnO thin film with hexagonal structure having strong (002) plane as preferred orientation. The energy band gap of ZnO films simultaneously deposited on quartz substrate was calculated from the measured UV–Visible transmittance spectra. High purity vacuum evaporated silver and aluminum thin films were used to make contacts to the n-ZnO and p-silicon, respectively. The current–voltage and capacitance–voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterostructures were measured over the temperature range of 80–300 K. The Schottky barrier height and ideality factor were determined by fitting of the measured current–voltage data into thermionic emission diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. This decrease in barrier height and increase in ideality factor at low temperature are attributed to the occurrence Gaussian distribution of barrier heights. The capacitance–voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterojunction diode were also studied over the wide temperature range. Capacitance–voltage data are used to estimate the barrier height and impurity concentration in n-type ZnO.
Similar content being viewed by others
References
H.S. Al-Salman, M.J. Abdullah, Measurement 46, 1698 (2013)
R.K. Gupta, K. Ghosh, P.K. Kahol, Mater. Lett. 64, 2022 (2010)
M. Rajabi, R.S. Dariani, A. Iraji Zad, Sens. Actuators A 180, 11 (2012)
M. Shafiei, J. Yu, R. Arsat, K. Kalantar-zadeh, E. Comini, M. Ferroni, G. Sberveglieri, W. Wlodarski, Sens. Actuators B 146, 507 (2010)
A. Rahm, M. Lorenz, T. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka, Appl. Phys. A 88, 31 (2007)
D. Valerini, A.P. Caricato, M. Lomascolo, F. Romano, A. Taurino, T. Tunno, M. Martino, Appl. Phys. A 93, 729 (2008)
A. Elshaer, A. Bakin, A. Chemofor, J. Blasing, A. Krost, J. Stoimenos, B. Pecz, M. Kreye, A. Waag, Appl. Phys. A 88, 57 (2007)
X. Li, E. Xin, L. Chen, J. Shi, C. Li, J. Zhang, Mater. Sci. Semicond. Process. 16, 1292 (2013)
A.C. Mofor, A.S. Bakin, A. Elshaer, D. Fuhrmann, F. Bertram, A. Hangleiter, J. Christen, A. Waag, Appl. Phys. A 88, 17 (2007)
H. Sheng, S. Muthukumar, N.W. Emanetoglu, Y. Lu, Appl. Phys. Lett. 80, 2132 (2002)
M.S. Tomar, F. Garcia, Thin Solid Films 90, 419 (1982)
S. Sarkar, S. Patra, S.K. Bera, G.K. Paul, R. Ghosh, Phys. E 46, 1 (2012)
E.F. Keskenler, M. Tomakin, S. Dogan, G. Turgut, S. Aydin, S. Duman, B. Gurbulak, J. Alloys Compd. 550, 129 (2013)
M.A. Gluba, N.H. Nickel, K. Hinrichs, J. Rappich, J. Appl. Phys. 113, 043502 (2013)
M. Novotny, J. Cizek, R. Kuzel, J. Bulir, J. Lancok, J. Connolly, E. McCarthy, S. Krishnamurthy, J.P. Mosnier, W. Anwand, G. Brauer, J. Phys. D Appl. Phys. 45, 225101 (2012)
Y. Zhang, X. Zheng, X. Zhong, S. Deng, Meas. Sci. Technol. 23, 105107 (2012)
M. Gupta, F.R. Chowdhury, D. Barlage, Y.Y. Tsui, Appl. Phys. A 110, 793 (2013)
C. Periasamy, R. Prakash, P. Chakrabarti, J. Mater. Sci. Mater. Electron. 21, 309 (2010)
A. Taabouche, A. Bouabellou, F. Kermiche, F. Hanini, S. Menakh, Y. Bouachiba, T. Kerdja, C. Benazzouz, M. Bouafia, S. Amara, Adv. Mater. Phys. Chem. 3, 209 (2013)
X. Zhang, F. Hai, C. Jia, X. Sun, L. Ding, W. Zhang, Microelectron. Eng. 93, 5 (2012)
C. Tsiarapas, D. Girginoudi, N. Georgoulas, Mater. Sci. Semicond. Process. 17, 199 (2014)
Joint Committee on Powder Diffraction Standards, Powder Diffraction File 36-1451, International Center for Diffraction Data, Swarthmore, PA (1997)
B.D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, 1979)
F. Zahedi, R.S. Dariani, S.M. Rozati, Sens. Actuators A 199, 123 (2013)
B. Ismail, M. Abaab, B. Rezig, Thin Solid Films 383, 92 (2001)
J. Tauc, F. Abeles, Optical Properties of Solids (North-Holland, Amsterdam, 1971), p. 277
R.E. Marotti, C.D. Bojorge, E. Broitman, H.R. Canepa, J.A. Badan, E.A. Dalchiele, A.J. Gellman, Thin Solid Films 517, 1077 (2008)
G. Srinivasan, J. Kumar, J. Cryst. Growth 310, 1841 (2008)
T. Ratana, P. Amornpitoksuk, T. Ratana, S. Suwanboon, J. Alloys Compd. 470, 408 (2009)
F.M. Ali, M.K. Abu-Assy, S. El-Gazzar, M. Iqbal, M. Hussain, Mater. Sci.-Pol. 30, 248 (2012)
M. Stamataki, D. Tsamakis, J.P. Xanthakis, H.A. Ali, S. Esmaili, A.A. Iliadis, Microelectron. Eng. 104, 95 (2013)
S. Chand, J. Kumar, J. Appl. Phys. 80, 288 (1996)
J.H. Werner, H.H. Guttler, J. Appl. Phys. 69, 1522 (1991)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)
E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988)
F. Chaabouni, M. Abaab, B. Rezig, Superlattices Microstruct. 39, 171 (2006)
Y.P. Song, R.L.V. Meirhaeghe, W.H. Laflere, F. Cardon, Solid State Electron. 29, 633 (1986)
B. Akkal, Z. Benamara, B. Gruzza, L. Bideux, Vacuum 57, 219 (2000)
S. Altindal, S. Karadeniz, N. Tugluoglu, A. Tataroglu, Solid State Electron. 47, 1847 (2003)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kumar, R., Chand, S. Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction. J Mater Sci: Mater Electron 25, 4531–4537 (2014). https://doi.org/10.1007/s10854-014-2200-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-014-2200-z