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Effect of sintering temperature on electrical properties, dielectric characteristics, and aging behavior of ZnO–V2O5-based varistor ceramics modified with Bi2O3

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Abstract

The effect of sintering temperature on microstructure, electrical properties, dielectric characteristics, and aging behavior of ZnO–V2O5–MnO2–Nb2O5–Bi2O3 varistor ceramics was systematically investigated at 875–950 °C. The sintered density decreased from 5.50 to 5.34 g/cm3 and the average grain size increased from 5.4 to 15.0 μm with an increase in the sintering temperature. The breakdown field (EB) decreased from 5,785 to 1,181 V/cm with an increase in the sintering temperature. The varistor ceramics sintered at 900 °C exhibited a surprisingly high nonlinear coefficient (α = 61). The donor concentration (Nd) increased from 2.08 × 1017 to 4.64 × 1017 cm−3 with an increase in the sintering temperature and the barrier height (Φb) exhibited 1.08 eV as the maximum value at 900 °C. Concerning stability, the varistors sintered at 950 °C exhibited the strongest accelerated aging characteristics, where %ΔEB = −1.4 % and %Δα = −14.6 % for DC accelerated aging stress of 0.85 EB/85 °C/24 h.

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  1. Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan, 614-714, Korea

    Choon-W. Nahm

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  1. Choon-W. Nahm
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Nahm, CW. Effect of sintering temperature on electrical properties, dielectric characteristics, and aging behavior of ZnO–V2O5-based varistor ceramics modified with Bi2O3 . J Mater Sci: Mater Electron 24, 118–124 (2013). https://doi.org/10.1007/s10854-012-0942-z

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  • DOI: https://doi.org/10.1007/s10854-012-0942-z

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