Abstract
This study employed a Mo–5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo–5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.
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Lin, Y.C., Tu, Y.Y. & Shen, C.H. Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells. J Mater Sci: Mater Electron 24, 514–519 (2013). https://doi.org/10.1007/s10854-012-0935-y
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DOI: https://doi.org/10.1007/s10854-012-0935-y