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Preparation and properties of surface textured ZnO: Al films by direct current pulse magnetron sputtering

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Abstract

Transparent conductive surface textured Al-doped zinc oxide (ZnO:Al, AZO) thin films were prepared on glass substrates by direct current pulse magnetron sputtering at substrate temperature of 270 °C and post-etching in NaOH solution at room temperature. The effects of Ar flow rate on the structural, optical, electrical properties and light trapping ability were investigated systematically. With the increasing of Ar flow rate from 10 to 50 sccm, different surface features ranging from honeycomb-like to crater-like structures were observed. The relationship between surface textured structures and Ar flow rate was discussed. The AZO film deposited with Ar flow rate in 50 sccm displayed fine optoelectronic properties, improved figure of merit and effective surface textured structures for light trapping, which could be applied as a transparent conducting electrode in silicon-based thin film solar cells.

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Acknowledgments

This work was supported by the National Natural Science Foundations of China (Grant No. 51002018 and 51102030), the Project of Open Research Foundation of the Ministry of Education Key Laboratory of Materials Modification (Dalian University of Technology) (Grant No. DP1050901), the Program for Liaoning Excellent Talents in University (Grant No. LJQ2011043), the Dalian Economy and Communication Committee Foundation of China (Grant No. 2009-3-215-jw-cxyhz) and the Dalian Science and Technology Plan Projects of China (Grant No. 2010J21DW008 and 2011A15GX025).

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Correspondence to Ying Wang.

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Wang, Y., Wang, H., Wang, Y. et al. Preparation and properties of surface textured ZnO: Al films by direct current pulse magnetron sputtering. J Mater Sci: Mater Electron 24, 53–57 (2013). https://doi.org/10.1007/s10854-012-0836-0

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  • DOI: https://doi.org/10.1007/s10854-012-0836-0

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