Abstract
(Pb,La)(Zr,Ti)O3 antiferroelectric 1.4 μm-thick films have been prepared on Pt (111)/Ti/SiO2/Si(100) substrates by sol–gel process. The structures and dielectric properties of the antiferroelectric thick films were investigated. The films displayed pure perovskite structure with (100)-preferred orientation. The surface of the films was smooth, compact and uniform. The antiferroelectric (AFE) characterization have been demonstrated by P (polarization)-E (electric field) and C(capacitance)-V (DC bias) curves. The AFE–ferroelectric (FE) and FE-to-paraelectric (PE) phase transition were also investigated as coupling functions of temperature and direct current electric field. With the applied field increased, the temperature of AFE-to-FE phase transition decreased and the FE-to-PE phase shifted to high temperature. The AFE-to-FE phase transition was adjustable by direct current electric field. (Pb,La) (Zr,Ti) O3 antiferroelectric films have broad application prospects in microelectromechanical systems because of the phase transition.
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Acknowledgments
The authors would like to acknowledge the support from the National Natural Science Foundation of China under Grant No. 51175483, Shanxi Provincial Natural Science Foundation of China under Grant No. 20100210023-6, and Program for the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi.
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Chou, X., Geng, W., Lv, Y. et al. Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films. J Mater Sci: Mater Electron 24, 861–865 (2013). https://doi.org/10.1007/s10854-012-0835-1
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DOI: https://doi.org/10.1007/s10854-012-0835-1