Abstract
Copper indium diselenide thin films were prepared by spray pyrolysis technique on glass substrates at different deposition temperatures ranging from 150 to 300 °C. XRD patterns of sprayed CuInSe2 films showed that all films are polycrystalline with a chalcopyrite structure and a preferential orientation along the (112) direction. The chemical composition analysis showed that the Cu/In ratio increased with increasing the deposition temperature. The atomic force micrographs show that the elaborated films have a uniform surface morphology with a homogeneous distribution of crystallites. The electrical conductivity of the prepared films increased with increasing the deposition temperature. The energy band gap of prepared films decreased with increasing Cu/In ratio.
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Mahmoud, F.A., Boshta, M. & Sayed, M.H. Correlation between sprayed CuInSe2 thin films properties and deposition temperature. J Mater Sci: Mater Electron 24, 448–451 (2013). https://doi.org/10.1007/s10854-012-0721-x
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DOI: https://doi.org/10.1007/s10854-012-0721-x