Formation of CuInSe2 absorber by rapid thermal processing of electron-beam evaporated stacked elemental layers
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- Li, ZH., Cho, ES., Kwon, S.J. et al. J Mater Sci: Mater Electron (2012) 23: 964. doi:10.1007/s10854-011-0528-1
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Copper indium diselenide (CuInSe2) film was formed using the rapid thermal process (RTP) of electron-beam (E-beam) evaporated Cu–In stacked elemental layers as an absorber layer for chalcopyrite solar cells. The E-beam evaporation method could accurately control the thickness of each elemental layer so that the chemical composition of Cu–In precursor could also be controlled by changing the thickness ratio of the Cu/In metal layer. The device-quality Cu-deficient CuInSe2 film was obtained when the thickness ratio of Cu/In was about 1/2.5. Otherwise, the RTP process time was also certified as one of the most important parameters of RTP when the temperature was over 550 °C. A single-phase CuInSe2 was successfully obtained after rapid thermal process under 580 °C for 3 min. Finally, the growth mechanism of CuInSe2 film during RTP process was also summarized.