Journal of Materials Science: Materials in Electronics

, Volume 21, Issue 11, pp 1202–1206

Interdiffusion studies in bulk Au–Ti system

Authors

  • A. K. Kumar
    • Department of Materials Engineering and Centre for Electronics Design and TechnologyIndian Institute of Science
    • Department of Materials Engineering and Centre for Electronics Design and TechnologyIndian Institute of Science
Article

DOI: 10.1007/s10854-009-0047-5

Cite this article as:
Kumar, A.K. & Paul, A. J Mater Sci: Mater Electron (2010) 21: 1202. doi:10.1007/s10854-009-0047-5

Abstract

The performance of the contacts, where Au/Ti layers are used in the metallization scheme, largely depends on the product phases grown by interdiffusion at the interface. It is found that four intermetallic compounds grow with narrow homogeneity range and wavy interfaces in the interdiffusion zone. The presence of wavy interfaces is the indication of high anisotropy in diffusion of the product phases. This also reflects in the deviation of parabolic growth from the average. Further, we have determined the relevant diffusion parameters, such as interdiffusion coefficient in the penetrated region of the end members and integrated diffusion coefficients of the intermetallic compounds.

Copyright information

© Springer Science+Business Media, LLC 2009