Journal of Materials Science: Materials in Electronics

, Volume 20, Issue 11, pp 1129-1134

First online:

Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

  • M. DevikaAffiliated withDepartment of Physics, Sri Venkateswara University
  • , N. Koteeswara ReddyAffiliated withDepartment of Physics, Indian Institute of ScienceSchool of Chemistry, Tel Aviv University Email author 
  • , S. Venkatramana ReddyAffiliated withDepartment of Physics, S. V. University PG Centre
  • , K. RameshAffiliated withDepartment of Physics, Indian Institute of Science
  • , K. R. GunasekharAffiliated withDepartment of Instrumentation, Indian Institute of Science Email author 

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The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.