Journal of Materials Science: Materials in Electronics

, Volume 20, Issue 11, pp 1129–1134

Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

Article

DOI: 10.1007/s10854-008-9838-3

Cite this article as:
Devika, M., Koteeswara Reddy, N., Venkatramana Reddy, S. et al. J Mater Sci: Mater Electron (2009) 20: 1129. doi:10.1007/s10854-008-9838-3

Abstract

The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Department of PhysicsSri Venkateswara UniversityTirupatiIndia
  2. 2.Department of PhysicsIndian Institute of ScienceBangaloreIndia
  3. 3.School of ChemistryTel Aviv UniversityTel AvivIsrael
  4. 4.Department of PhysicsS. V. University PG CentreKavaliIndia
  5. 5.Department of InstrumentationIndian Institute of ScienceBangaloreIndia