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Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures

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Abstract

Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The θ–2θ scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans (ϕ) on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance–voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current–voltage curve shows that the leakage current is 2.41 × 10−7 A/cm2 under an applied voltage of 2 V.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, China

    W. F. Qin, J. Xiong, J. Zhu, J. L. Tang, W. J. Jie, X. H. Wei, Y. Zhang & Y. R. Li

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  1. W. F. Qin
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  2. J. Xiong
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  3. J. Zhu
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  4. J. L. Tang
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  5. W. J. Jie
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  6. X. H. Wei
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  7. Y. Zhang
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  8. Y. R. Li
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Correspondence to W. F. Qin.

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Qin, W.F., Xiong, J., Zhu, J. et al. Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures. J Mater Sci: Mater Electron 18, 973–976 (2007). https://doi.org/10.1007/s10854-007-9150-7

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  • DOI: https://doi.org/10.1007/s10854-007-9150-7

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