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Hybrid organic on inorganic semiconductor heterojunction

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Abstract

Hybrid organic on inorganic semiconductor heterojunctions with a sandwich structure have been fabricated and studied using conjugated polymers. The inorganic semiconductor was n-type silicon substrate. The conjugated polymers used include poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) containing polyhedral oligomeric silsesquioxanes (MEH-PPV POSS), regioregular poly(3-hexylthiophene) (RR-P3HT) and poly(3,4-ethylenedioxythiophene) (PEDOT). Current density–voltage and capacitance–voltage measurements were performed. All of the devices displayed a rectifying characteristic. Among these devices, the first ever reported PEDOT doped with BF3 on n-Si heterojunction devices showed the best performance with a rectification ratio around 5.7 × 105 at  ± 2 V and an ideality factor of 2.3. The results showed better device performance with decreased potential barrier height at the organic–inorganic interface. Results also suggested that smaller energy level offset between the HOMO of the conjugated polymer and the work function of anode metal will improve device performance.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, McGill University, McConnell Engineering Building, Rm 707, 3480 University Street, Montreal, QC, Canada, H3A 2A7

    C. H. Chen & I. Shih

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  1. C. H. Chen
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  2. I. Shih
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Correspondence to I. Shih.

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Chen, C.H., Shih, I. Hybrid organic on inorganic semiconductor heterojunction. J Mater Sci: Mater Electron 17, 1047–1053 (2006). https://doi.org/10.1007/s10854-006-9038-y

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  • DOI: https://doi.org/10.1007/s10854-006-9038-y

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