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Synthesis, structure, and field emission properties of sulfur-doped nanocrystalline diamond

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Abstract

The synthesis and properties of sulfur-doped nanocrystalline diamond films were investigated. The films were deposited by hot-filament chemical vapor deposition on Mo substrates using methane, hydrogen, and hydrogen disulfide. The nanocrystalline nature of the material arises from the induction of continuous secondary nucleation in the chemical vapor deposition environment. Complementary characterization tools were employed in order to obtain a comprehensive and coherent understanding of the correlations between the structural and electronic properties. In particular, sulfur-doped nanocrystalline diamond films show n-type Hall conductivity, enhanced field emission properties, and insensitivity to ion radiation. It was found that n-type doping of the tetragonally-bonded carbon matrix together with a nano network of trigonally-bonded carbon are crucial elements for enhanced field emission from nanocrystalline diamond. These conclusions and the corresponding supporting evidence are discussed.

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Authors and Affiliations

  1. Department of Physics and Department of Chemistry, University of Puerto Rico, San Juan, PR, 00931

    G. Morell, A. González-Berríos & B. R. Weiner

  2. Department of Physics, Astronomy, and Materials Science, Southwest Missouri State University, Springfield, MO, 65804-0027

    S. Gupta

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  1. G. Morell
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  2. A. González-Berríos
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  3. B. R. Weiner
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  4. S. Gupta
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Morell, G., González-Berríos, A., Weiner, B.R. et al. Synthesis, structure, and field emission properties of sulfur-doped nanocrystalline diamond. J Mater Sci: Mater Electron 17, 443–451 (2006). https://doi.org/10.1007/s10854-006-8090-y

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  • DOI: https://doi.org/10.1007/s10854-006-8090-y

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