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Fractal character of in situ heat treated metal-compound semiconductor contacts

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Abstract

The heat treatment of metallized (Au) compound semiconductors (InP) was studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the change in the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Our experiments proved that the surface morphology can be characterized by its fractal dimension at the maximum value of the volatile component loss. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature (in a given temperature range), on the volatile component loss and on metal thickness is described. Changes of the surface morphology on the analyzed samples begin at different temperatures. The evaluated patterns were created describing contour lines of the metal islands on the surface. This island formation known as balling-up phenomenon is due to the heating up of the samples. In the case of the 10 and 30 nm Au/InP(100) samples the fractal behavior appeared nearly at the same temperature (470∘C α 490∘C). The examined thick Au(85 nm)/InP(100) contact showed a fractal character at a lower (385∘C) temperature. Although fractal dimension values could be obtained in a rather wide temperature range the surface had a real fractal character at only those temperatures where volatile component loss took place.

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Authors and Affiliations

  1. Institute of Microelectronics and Technology, Kandó Kálmán Polytechnic, P.O.B. 112, Budapest, H-1431, Hungary

    L. Dávid

  2. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49, Budapest, H-1525, Hungary

    L. Dobos & B. Pécz

  3. Dept. of Electronics Technology, Budapest University of Technology and Economics, Budapest, H-1521, Hungary

    B. Kovács & I. Mojzes

Authors
  1. L. Dávid
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  2. L. Dobos
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  3. B. Kovács
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  4. I. Mojzes
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  5. B. Pécz
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Dávid, L., Dobos, L., Kovács, B. et al. Fractal character of in situ heat treated metal-compound semiconductor contacts. J Mater Sci: Mater Electron 17, 321–324 (2006). https://doi.org/10.1007/s10854-006-6951-z

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  • DOI: https://doi.org/10.1007/s10854-006-6951-z

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