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Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study

  • E-MRS MACAN
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Abstract

The growth of GaSb thin films by MBE on GaAs (001) is investigated experimentally, using TEM, and theoretically, using KMC simulations. The atomic scale mechanisms inherent to the growth are discussed and described in the KMC model in which the strain is introduced through an elastic energy term based on a valence force field approximation. We observe that the first two monolayers of the deposited films form strained three-dimensional clusters, but further deposition induces film relaxation and rough 3D growth with valley formation presenting (111) facets with unstable bottoms. We show that the roughening morphology and creation of grooves during growth are in agreement with experimental TEM observations.

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Authors and Affiliations

  1. Laboratoire de Physique et de Mécanique des Matériaux, Faculté des Sciences et Techniques, B.P 523, 23000, Béni Mellal, Morocco

    N. Fazouan & F. El Kasri

  2. Laboratoire de la matière condensée, Faculté des Sciences et Techniques, B.P 146, 20650, Mohammedia, Morocco

    E. Atmani

  3. CNRS; LAAS, 7 Avenue du Colonel Roche, 31077, Toulouse, France

    M. Djafari Rouhani & A. Esteve

  4. Université de Toulouse; UPS, INSA, INP, ISAE; LAAS, 31077, Toulouse, France

    M. Djafari Rouhani & A. Esteve

Authors
  1. N. Fazouan
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  2. E. Atmani
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  3. F. El Kasri
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  4. M. Djafari Rouhani
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  5. A. Esteve
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Correspondence to N. Fazouan.

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Fazouan, N., Atmani, E., El Kasri, F. et al. Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study. J Mater Sci 47, 1684–1689 (2012). https://doi.org/10.1007/s10853-011-6018-2

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  • DOI: https://doi.org/10.1007/s10853-011-6018-2

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