Journal of Materials Science

, Volume 43, Issue 18, pp 6099–6104

Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor

Authors

  • Praveen Kumar
    • Semiconductors Laboratory, Department of Applied PhysicsGuru Nanak Dev University
    • Semiconductors Laboratory, Department of Applied PhysicsGuru Nanak Dev University
  • T. Stephen Sathiaraj
    • Department of PhysicsUniversity of Botswana
Article

DOI: 10.1007/s10853-008-2948-8

Cite this article as:
Kumar, P., Thangaraj, R. & Stephen Sathiaraj, T. J Mater Sci (2008) 43: 6099. doi:10.1007/s10853-008-2948-8

Abstract

The melt-quenched Sn10Sb20Se70 sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb2Se3 phase in the major proportion as compared to the SnSe2 phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between ΔE and Eo is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature.

Copyright information

© Springer Science+Business Media, LLC 2008