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Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

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Abstract

Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm2.

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Acknowledgements

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (No. 2015R1A2A2A0502795).

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Authors and Affiliations

  1. Department of Applied Physics, Kyung Hee University, Yongin, 446-701, South Korea

    Yoonho Ahn & Jong Yeog Son

  2. Department of Nanoenergy Engineering, Pusan National University, Busan, 609-735, South Korea

    Joonkyung Jang

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  1. Yoonho Ahn
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  2. Joonkyung Jang
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Correspondence to Yoonho Ahn or Jong Yeog Son.

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Ahn, Y., Jang, J. & Son, J.Y. Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films. J Electroceram 38, 100–103 (2017). https://doi.org/10.1007/s10832-017-0067-0

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