Abstract
Thin-film transistors (TFTs) were fabricated using In-Ga-Zn-O (IGZO) semiconductor layers deposited under different oxygen partial pressures. The devices were subjected to negative bias stress (NBS), negative bias illumination stress (NBIS), positive bias stress (PBS) and positive bias illumination stress (PBIS). While device degradation is negligible under NBS, negative shifts in the threshold voltage (Vth) are observed in the presence of light (NBIS), of which the magnitude (ΔVth) decreases with increasing oxygen partial pressure during IGZO growth. Under PBS, the devices undergo positive Vth shifts, which become more severe with increasing oxygen content in IGZO. However, negative ΔVth values are observed under PBIS, of which the magnitude decreases with increasing oxygen content in the semiconductor. When positive gate bias is applied, the trapping of negative charge by interstitial oxygen atoms in IGZO is presumed to be the driving force inducing positive Vth shifts. On the other hand, when light is present, the generation of photo-induced excess carriers from oxygen-deficient defect sites is anticipated to be the driving force inducing negative Vth shifts. A balance between the competing mechanisms inducing either positive or negative Vth shifts must therefore be established when the devices are subjected to PBIS, for example in operating active matrix organic light emitting diode (AMOLED) displays using transparent panel arrays.
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References
K. Ahadi, A. Nemati, S.-M. Mahdavi, Mater. Lett. 83, 124 (2012)
K. Ahadi, A. Nemati, S.-M. Mahdavi, A. Vaezi, J. Mater. Sci. Mater. Electron. 24, 2128 (2013)
K. Ahadi, K. Cadien, RSC Adv. 6, 16301 (2016)
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature (London) 432, 488 (2004)
J. S. Park, W.-J. Maeng, H.-S. Kim, J.-S. Park, Thin Solid Films 520, 1679 (2012)
J.-S. Park, H. Kim, I.-D. Kim, J. Electroceram. 32, 117 (2014)
Y. W. Kim, W. K. Kwak, J. Y. Lee, W. S. Choi, K. Y. Lee, S. C. Kim, E. J. Yoo, SID Symp. Dig. Tech. Pap 40, 85 (2009)
S. An, J. Lee, Y. Kim, T. Kim, D. Jin, H. Min, H. Chung, S. S. Kim, SID Symp. Dig. Tech. Pap. 41, 706 (2010)
K.-H. Lee, J. S. Jung, K. S. Son, J. S. Park, T. S. Kim, R. Choi, J. K. Jeong, J.-Y. Kwon, B. Koo, S. Lee, Appl. Phys. Lett., 95, 232106 (2009)
S. Hong, S. Lee, M. Mativenga, J. Jang, IEEE Electron Device Lett. 35, 93 (2014)
A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, D. Striakhilev, IEEE J. Solid State Circuits 39, 1477 (2004)
A. Nathan, G. R. Chaji, S. J. Ashtiani, J. Disp. Technol. 1, 267 (2005)
H.-H. Hsieh, H.-H. Lu, H.-C. Ting, C.-S. Chuang, C.-Y. Chen, Y. Lin, J. Inf. Disp. 11, 160 (2010)
J. Chung, J. Lee, J. Choi, C. Park, J. Ha, H. Chung, S. S. Kim, SID Symp. Dig. Tech. Pap. 41, 148 (2010)
A. Rolland, J. Richard, J. P. Kleider, D. Mencaraglia, J. Electrochem. Soc. 140, 3679 (1993)
T.-C. Chen, T.-C. Chang, T.-Y. Hsieh, W.-S. Lu, F.-Y. Jian, C.-T. Tsai, S.-Y. Huang, C.-S. Lin, Appl. Phys. Lett. 99, 2 (2011)
J.-H. Shin, J.-S. Lee, C.-S. Hwang, S.-H. K. Park, W.-S. Cheong, M. Ryu, C.-W. Byun, J.-I. Lee, H. Y. Chu, ETRI J. 31, 62 (2009)
K. H. Ji, J.-I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, J. K. Jeong, Appl. Phys. Lett., 98, 103509 (2011)
B. Ryu, H.-K. Noh, E.-A. Choi, K. J. Chang, Appl. Phys. Lett., 97, 022108 (2010)
K. Ghaffarzadeh, S. Lee, A. Nathan, J. Robertson, S. Jeon, S. Kim, C. Kim, U.-I. Chung, J.-H. Lee, SID Symp. Dig. Tech. Pap. 42, 1154 (2011)
H.-H. Nahm, Y.-S. Kim, D. H. Kim, Phys. Status Solidi Basic Res. 249, 1277 (2012)
W. H. Han, Y. J. Oh, K. J. Chang, J.-S. Park, Phys. Rev. Appl. 3, 044008 (2015)
Acknowledgments
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No: 2014R1A1A2055138) and by research funding provided by Chungnam National University.
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Jozeph Park and Nguyen Dinh Trung contributed equally to this work.
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Park, J., Trung, N.D., Kim, Y.S. et al. A study on the competition between bias-induced charge trapping and light-induced instability in In-Ga-Zn-O thin-film transistors. J Electroceram 36, 135–140 (2016). https://doi.org/10.1007/s10832-016-0032-3
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DOI: https://doi.org/10.1007/s10832-016-0032-3