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Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriers

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Abstract

The performance of InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-well barriers formed from alternating p- and undoped regions is compared with that of reference devices having similar epilayer structure but with barriers formed from alternating n- and undoped regions. Simulations verify that p-type step-doping in the quantum barriers is more effective in reducing the polarization-induced electric field and lowering the energy barrier for hole transport as well as increasing the barrier height of the conduction band to confine electrons, thereby enhancing the radiative recombination rate compared with n-type step doping in the quantum barriers. This profile also increments hole injection and provides a more uniform carrier distribution across the multiple quantum wells. According to the simulation results, when using the alternating stepwise doping profile in the barrier regions in the proposed structure, the internal quantum efficiency is remarkably improved, offering dual advantages of a homogeneous hole distribution due to the undoped region and a reduced valence-band barrier height due to the p-doping.

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Acknowledgments

The authors gratefully acknowledge the Director, CEERI, Pilani for his encouragement in this work as well as all ODG members for their help and cooperation. This work is supported by the Council of Scientific and Industrial Research (CSIR) through sponsorship of the TAP-SUN programme through project NWP-55.

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Authors and Affiliations

  1. CSIR–Network of Institutes for Solar Energy (CSIR–NISE), Pilani, India

    Sumitra Singh, Pranav Utpalla, Suchandan Pal & Chenna Dhanavantri

  2. Opto-electronic Devices Group, CSIR–Central Electronics Engineering Research Institute (CSIR–CEERI), Pilani, Rajasthan, 333 031, India

    Sumitra Singh, Pranav Utpalla, Suchandan Pal & Chenna Dhanavantri

  3. Birla Institute of Technology and Science – Pilani, Pilani Campus, Pilani, Rajasthan, 333 031, India

    Pranav Utpalla

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  1. Sumitra Singh
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Correspondence to Sumitra Singh.

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Singh, S., Utpalla, P., Pal, S. et al. Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriers. J Comput Electron 15, 1040–1045 (2016). https://doi.org/10.1007/s10825-016-0838-x

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  • DOI: https://doi.org/10.1007/s10825-016-0838-x

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