Abstract
The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction. Couplings among the subbands are generated for two reasons: due to spatial variations of the confinement potential along the transport direction, and due to non-alignment of the device coordinate system with the principal axes of the constant energy conduction band ellipsoids. The problem simplifies considerably if the electrostatic potential is separable along transport and confinement directions, and further if the potential variations along the transport direction are slow enough to prevent dipolar coupling (Zener tunneling) between subbands. In this limit, the transport problem can be solved by employing two unitary operators to transform an arbitrarily oriented constant energy ellipsoid into a regular ellipsoid with principal axes along the transport, width and confinement directions of the device.
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References
Z. Ren et al., “nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs,” IEEE Trans. Electron Devices, 50(9), 1914 (2003).
J. Guo et al., “A computational study of thin-body, double-gate, schottky barrier MOSFETs,” IEEE Trans. Electron Devices, 49(11), 1897 (2002).
R. Venugopal et al., “A simple quantum mechanical treatment of scattering in nanoscale transistors,” J. Appl. Phys., 93(9), 5613 (2003).
C. Chui et al., “Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric,” IEEE Electron Device Lett., 23(8), 473 (2002).
T. Mizuno et al., “[110] strained-SOI n-MOSFETs with higher electron mobility,” IEEE Electron Device Lett., 24(4), 266 (2003).
F. Stern and W. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., 163(3), 816 (1967).
A. Rahman et al., “Assessment of Ge n-MOSFETs by quantum simulation,” IEDM Tech. Dig., 2003, 471 (2003).
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Rahman, A., Lundstrom, M. & Ghosh, A.W. Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers. J Comput Electron 3, 281–285 (2004). https://doi.org/10.1007/s10825-004-7062-9
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DOI: https://doi.org/10.1007/s10825-004-7062-9