November 2006, Volume 47, Issue 6, pp 867-878
Elastic silicon-film-based nanoshells: Formation, properties, and applications
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Controllable formation and properties of solid single-crystal micro-and nanoshells of various shapes (tubes and spirals, vertically positioned rings and cylinders, and bent and trough-shaped cantilevers) are briefly reviewed, and new results are given. The shells and complicated structures of prescribed size and shape are formed with the use of elastic energy of initial strained SiGe/Si films of nanometer thickness and methods of highly selective and directed detachment of the films from the silicon substrates. It is experimentally demonstrated that the diameters of the fabricated SiGe/Si nanotubes are several times smaller than the values predicted by the continuum elasticity theory. The properties of the shells made of semiconductor and hybrid (metal-semiconductor and metal-dielectric-semiconductor) films and their applications in micro-and nanoscale electrical engineering are discussed.
Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 47, No. 6, pp. 114–128, November–December, 2006.
W. Mönch, Semiconductor Surfaces and Interfaces, Springer, Berlin (2001).MATH
V. Ya. Prinz, V. A. Seleznev, and A. V. Chekhovskii, “Self-forming semiconductor micro-and nanotubes,” Mikrosistem. Tekh., No. 6, 29–34 (2003).
V. M. Osadchii and V. Ya. Prinz, “Detachment of charge carriers in rolled heterostructures,” Pis’ma Zh. Éksp. Teor. Fiz., 72, No. 6, 451–456 (2000).
L. I. Magarill, A. V. Chaplik, and M. V. Éntin, “Spectrum and kinetics of electrons in curvilinear nanostructures,” Usp. Fiz. Nauk, 175, No. 9, 995–1000 (2005).
M. C. Roco, R. S. Williams, and P. Alivisatos, Nanotechnology Research Directions, Kluwer Acad. Publ., Boston (2000).
B. Brushan (ed.), Handbook of Nanotechnology, Springer-Verlag, Berlin (2004).
K. Goser, P. Glosekotter, and J. Dienstuhl, Nanoelectronics and Nanosystems. From Transistors to Molecular and Quantum Devices, Springer-Verlag, Berlin (2004).
S. A. Campbell and H. J. Lewerenz (eds.), Semiconductor Micromachining, Vol. 2, John Wiley and Sons., Chichester (1998).
U. Schnakenberg, W. Benecke, and B. Lochel, “NH4OH based etchants for silicon micromachining,” Sensors Actuators, A21/A23, 1031–1035 (1990).CrossRef
F. Wang, Y. Shi, J. Liu, et al., “Highly selective chemical etching of Si vs. Si1−x Gex using NH4OH solution,” J. Electrochem. Soc., 144, No. 3, L37–L39 (1997).CrossRef
Y. C. Tsui and T. W. Clyne, “An analytical model for predicting residual stresses in progressively deposited coatings. Pt 1. Planar geometry,” Thin Solid Films, 306, No. 1, 23–33 (1997).CrossRef
E. A. Ivanova, A. M. Krivtsov, and N. F. Morozov, “Peculiarities of the bending-stiffness calculation for nanocrystals,” Doklady Physics, 47, No. 8, 620–622 (2002).CrossRef
A. V. Bolesta, I. F. Golovnev, and V. M. Fomin, “InGaAs/GaAs nanotubes simulation: Comparison between continual and molecular dynamics approaches,” Comp. Mater. Sci., 36, Nos. 1/2, 147–151 (2006).CrossRef
F. Liu, “Mechanical bending of nanoscale thin films: dominating role of atomic surface reconstruction and intrinsic surface stress,” in: Abstracts of the 15th U.S. Nat. Congress on Theor. and Appl. Mech., No. 693, Univ. of Colorado, Boulder (2006).
S. V. Golod, V. Ya. Prinz, and V. I. Mashanov, “Directional-rolling method for strained SiGe/Si films and its application to fabrication of hollow needles,” Thin Solid Films, 489, Nos. 1/2, 169–176 (2005).CrossRef
D. Grützmacher, O. Kirfel, E. Deckhardt, et al., “Free-standing Si/SiGe micro-and nanotubes for microelectronics,” in: S. Luryi, J. Xu, and A. Zaslavsky (eds.), Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, John Wiley and Sons-IEEE Press Publ., New York (2004), pp. 235–242.
D. Hisamoto, W. C. Lee, J. Kedzierski, et al., “FinFET — a self-aligned double-gate MOSFET scalable to 20 nm,” IEEE Trans. Electron Devices, 47, No. 12, 2320–2325 (2000).CrossRef
A. Sazonov, M. Meitine, D. Stryakhilev, and A. Nathan, “Low-temperature materials and thin-film transistors for electronics on flexible substrates,” Semiconductors, 40, No. 8, 959–967 (2006).CrossRef
S. V. Golod, D. Grützmacher, C. David, et al., “Fabrication of SiGe/Si/Cr bent cantilevers based on self-rolling of epitaxial films,” Microelectron. Eng., 67/68, 595–601 (2003).CrossRef
J. Chen, J. Zou, C. Liu, et al., “Design and modeling of a micromachined high-Q tunable capacitor with large tuning range and a vertical planar spiral inductor,” IEEE Trans. Electron Devices, 50, No. 3, 730–739 (2003).CrossRef
V. M. Fomin, A. N. Shiplyuk, V. M. Aniskin, et al., “Hot-tube probes of thermal anemometers with high spatial and temporal resolution,” Doklady Physics, 51, No. 3, 132–135 (2006).CrossRef
A. N. Shiplyuk, V. A. Seleznev, and V. M. Aniskin, “Hot-wire probe,” Patent of the Russian Federation, No. 2207576 RF, G 01 P 5/12, Publ. 06.27.2003.
A. Cho, “Pretty as you please, curling films turn themselves into nanodevices,” Science, 313, No. 5784, 164–165 (2006).CrossRef
L. Zhang, L. X. Dong, D. J. Bell, et al., “Fabrication and characterization of free-standing Si/Cr micro-and nanospirals,” Microelectron. Eng., 83, Nos. 4/9, 1237–1240 (2006).CrossRef
L. Zhang, E. Ruh, D. Grutzmacher, et al., “Anomalous coiling of SiGe/Si and SiGe/Si/Cr helical nanobelts,” Nano Lett., 6, No. 7, 1311–1317 (2006).CrossRef
T. Tokuda, Y. Sakano, D. Mori, et al., “Fabrication and current-drive of SiGe/Si ‘Micro-origami’ epitaxial MEMS device on SOI substrate,” Electron. Lett., 40, No. 21, 1333–1334 (2004).CrossRef
R. Songmuang, N. Y. Jin-Phillipp, S. Mendach, and O. G. Schmidt, “Single rolled-up SiGe/Si microtubes: Structure and thermal stability,” Appl. Phys. Lett., 88, No. 2, 021913-1–021913-3 (2006).
M. H. Huang, C. Boone, M. Roberts, et al., “Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication,” Advanced Mater., 17, No. 23, 2860–2864 (2005).CrossRef
H. C. Chen, K. F. Liao, S. W. Lee, and L. J. Chen, “Self-forming silicide/SiGe-based tube structure on Si(001) substrates,” Thin Solid Films, 469, 483–486 (2004).CrossRef
A. V. Prinz, V. Ya. Prinz, and V. A. Seleznev, “Microneedle in the integral version and methods for its fabrication,” Parent of the Russian Federation, No. 2179458 RF, 7 A 61 M 5/32, Publ. 02.20.2002.
A. V. Prinz and V. Ya. Prinz, “Application of semiconductor micro-and nanotubes in biology,” Surf. Sci., 532, 911–915 (2003).CrossRef
A. V. Prinz, V. Ya. Prinz, and V. A. Seleznev, “Semiconductor micro-and nanoneedles for microinjections and ink-jet printing,” Microelectron. Eng., 67/68, 782–788 (2003).CrossRef
V. Ya. Prinz, V. A. Seleznev, A. K. Gutakovsky, et al., “Rolled InAs/GaAs/Ta2O5 heterofilms containing InAs quantum dots,” in: Nanostructures: Physics and Technology: Proc. of the 11th Int. Symp., S. n., St. Petersburg (2003), p. 327.
T. Kipp, H. Welsch, C. Strelow, et al., “Optical modes in semiconductor microtube ring resonators,” Phys. Rev. Lett., 96, No. 7, Art. 077403 (2006).
S. Mendach, R. Songmuang, S. Kiravittaya, et al., “Light emission and wave guiding of quantum dots in a tube,” Appl. Phys. Lett., 88, No. 11, Art. 111120 (2006).
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