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Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

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Abstract

In this paper, we present sensitivity measurement as well as measured and calculated absorption spectra for AlGaN/GaN THz plasmonic detector made of a metallic grating in-between two ohmic contacts. Detectors with different grating patterns have been fabricated and their sensitivity, reaching 1.9 μA/W at 77 K and 0.7 μA/W at 300 K, measured with a voltage applied between the ohmic contacts. It is the first time that such a detector shows THz detection with no voltage applied on the grating, namely with a bidimensional electron gas (2DEG) having a homogeneous electron density. These results are consistent with detection by drag-effect rectification. Measurements held between 0.648 and 0.690 THz show that the dependence of the sensitivity on the frequency follows the absorption spectrum, indicating that absorption is a crucial step in the detection process. Further simulations of absorption spectra show the tunability offered by such detector and allow us to predict frequency behavior for grating-biased detectors as well, in which the rectification is mainly governed by ratchet effect.

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Acknowledgments

The authors acknowledge the support from GANEX (ANR-11-LABX-0014). GANEX belongs to the public funded Investissements d’Avenir program managed by the French ANR agency. This work was partly supported by the French RENATECH network.

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Authors and Affiliations

  1. Institut d’Electronique Fondamentale, Univ Paris Sud, CNRS, Universite Paris-Saclay, Bat. 220, rue Andre Ampere, Centre Scientifique d’Orsay, 91405, Orsay cedex, France

    H. Spisser, A.-S. Grimault-Jacquin, N. Zerounian, A. Aassime & F. Aniel

  2. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

    L. Cao

  3. Institut Interdisciplinaire d’Innovation Technologique, Universite de Sherbrooke, Sherbrooke, J1K 0A5, Quebec, Canada

    H. Spisser, F. Boone & H. Maher

  4. Centre de Recherche sur l’Hetero-Epitaxie et ses Applications, CNRS UPR-10, Valbonne, 06560, France

    Y. Cordier

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  1. H. Spisser
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  2. A.-S. Grimault-Jacquin
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  9. F. Aniel
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Correspondence to H. Spisser.

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Spisser, H., Grimault-Jacquin, AS., Zerounian, N. et al. Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating. J Infrared Milli Terahz Waves 37, 243–257 (2016). https://doi.org/10.1007/s10762-015-0224-y

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  • DOI: https://doi.org/10.1007/s10762-015-0224-y

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